Preparation method of ultrahigh thermal conductivity, surface machinable diamond‑al composites

A composite material and diamond technology, which is applied in the field of ultra-high thermal conductivity metal matrix composite materials, can solve the problems of large contact thermal resistance, difficult processing, and complicated process, and achieve the effects of improving production efficiency, short preparation period and reducing cost.

Active Publication Date: 2017-05-24
SOUTHEAST UNIV
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  • Application Information

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Problems solved by technology

At present, the main problems of the melt infiltration method are: ①The time required for sample preparation is generally more than ten hours (the furnace body is large in size and thermal inertia is large, and the heating rate, especially the cooling rate is very slow), and the preparation efficiency is very low; ② When the prefabricated block process is used, the diamond particles are separated by the adhesive, and the contact thermal resistance is large; ③When the diamond particle free accumulation process is used, on the one hand, the high-pressure infiltration of aluminum liquid will cause the particle accumulation to displace and loosen. After the percolation is completed, the diamond particles in the aluminum liquid only rely on gravity to settle at the bottom of the mold (the specific gravity difference between diamond and aluminum liquid is only about 0.8g / cm 3 ), the particles cannot be in reliable close contact
However, this method requires the preparation of diamond preforms. Not only is the process complicated, but the addition of the binder will also introduce thermal resistance between the diamond particles, making it difficult to form a fast heat transfer channel, which limits the improvement of the thermal conductivity of the composite material.
At the same time, in order to ensure the flatness of the front and back of the diamond preform, this invention also needs to process the front and back of the preform (cutting with a band saw or cutting machine or grinding with a grinding machine), but the hardness of the diamond is very large, which is easy to cause The wear of processing tools makes processing difficult, which undoubtedly increases the cost of material preparation

Method used

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  • Preparation method of ultrahigh thermal conductivity, surface machinable diamond‑al composites
  • Preparation method of ultrahigh thermal conductivity, surface machinable diamond‑al composites
  • Preparation method of ultrahigh thermal conductivity, surface machinable diamond‑al composites

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preparation example Construction

[0040] A kind of preparation method of ultrahigh thermal conductivity, surface machinable diamond-Al composite material of the present invention comprises the following steps:

[0041] Step 1: Put a second pure Al sheet 10, a flat second diamond particle layer 9 with a thickness of h, and an Al-Si alloy sheet 8 with a thickness of H in order from bottom to top in the graphite mold. A flat first diamond particle layer 7 with a thickness of h, and a first pure Al sheet 6, forming five layers of "pure Al sheet-diamond particle layer-Al-Si alloy sheet-diamond particle layer-pure Al sheet" structure;

[0042] Step 2: Cold press the formed five-layer structure with a pressure of 15-20MPa, so that the layers of the structure are in close contact;

[0043] The third step: put the upper pressure head 1 with the overflow groove 2 into the graphite mold, and put the assembled mold into the discharge plasma sintering furnace;

[0044] The fourth step: heat and pressurize the five-layer ...

Embodiment 1

[0048] In a graphite mold with an inner diameter of 20mm, a 2mm thick pure Al sheet with a purity of 99.7%, a 1mm thick (0.69g) MBD4 type diamond stacked layer with an average particle size of 89μm, a 0.85mm thick (0.71g ) Al-Si alloy sheet (Si content is 7wt%), 1mm thick (0.69g) MBD4 type diamond deposition layer with an average particle size of 89 μm, and a 2mm thick pure Al sheet with a purity of 99.7%, cold pressing the deposition system, The cold pressing pressure is 20MPa. Put the upper pressure head with an overflow tank into the mold, then put the mold into the discharge plasma sintering furnace for sintering, the sintering temperature is 620°C, the sintering pressure is 15MPa, the vacuum degree is 10Pa, keep the pressure for 10 minutes and then cool down, and keep the pressure To cooling end, obtain sandwich structure diamond-Al composite material (composite section see Figure 8 and 9 ). The excess Al on the surface of the composite material was pre-grinded with 4...

Embodiment 2

[0050] In a graphite mold with an inner diameter of 20mm, a 2mm thick pure Al sheet with a purity of 99.7% and a 1mm thick (0.69g) MBD4 type diamond accumulation layer with an average particle size of 200μm (diamond particle density of 3.5g) are laid from bottom to top. / cm 3 , stacking density is 63%), 0.8mm thick (0.66g) Al-Si alloy sheet (Si content is 12.5wt%), 1mm thick (0.69g) average particle diameter is the MBD4 type diamond stacked layer of 200 μ m, the purity is 99.7% of 2mm thick pure Al sheets are cold-pressed to the stacking system, and the cold-pressing pressure is 15MPa. Put the upper pressure head with an overflow tank into the mold, then put the mold into the discharge plasma sintering furnace for sintering, the sintering temperature is 580°C, the sintering pressure is 10MPa, the vacuum degree is 5Pa, keep the pressure for 30 minutes and then cool down, and keep the pressure At the end of cooling, a sandwich-structured diamond-Al composite material is obtaine...

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Abstract

The invention relates to a method for manufacturing an ultrahigh-heat-conductive diamond-Al composite material with the surface capable of being machined. The method includes the specific steps that a second pure Al sheet, diamond particles, an Al-Si alloy sheet, diamond particles and a first pure Al sheet are sequentially placed in a graphite die from bottom to top, a stacking system is subjected to cold-pressing and then put in a discharging plasma sintering furnace (SPS) to be heated and pressurized, the Al-Si alloy sheet is melted and seeps into gaps among the diamond particles, and the diamond-Al composite material of a sandwich structure is obtained. The surface aluminum layer of the composite material is ground and mechanically polished or electrolytically polished, so that a flat and smooth surface is obtained. The surface is free of a coating; the interstitial volume of Al-Si alloy is slightly larger than that of the diamond particles; and the thickness of each pure Al sheet ranges from 2 mm to 3 mm. The method has the beneficial effects that the advantages of SPS and the fusion infiltration process are combined, the diamond-Al composite material with the ultrahigh heat conductance and with the surface capable of being machined can be efficiently manufactured, and the requirements for surface flatness and roughness of an electronic packaging material are met.

Description

technical field [0001] The invention relates to an ultrahigh thermal conductivity metal matrix composite material, in particular to a method for preparing ultrahigh thermal conductivity and surface machinable diamond-Al matrix composite material. Background technique [0002] With the development of integrated circuit technology, the integration of chips is getting higher and higher, and the heat flux generated by the circuit is correspondingly increased sharply, and the heat density generated by some chips has reached 150W / cm 2 , The problem of heat dissipation has become a restrictive factor for the continuous improvement of chip integration. For example, the U.S. Navy has set a cooling target of 1000W / cm for T / R components in recent phased array radars 2 Only new packaging materials with a thermal conductivity greater than 400W / (m K) and a thermal expansion coefficient that matches the chip semiconductor material (Si, GaAs) can meet the above-mentioned high-efficiency he...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F7/02
CPCB22F7/02
Inventor 陈锋曾从远余新泉张友法裴喜伟
Owner SOUTHEAST UNIV
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