Polishing solution for A orientation sapphire polishing, and preparation method thereof

A polishing liquid and sapphire technology, applied in the field of sapphire polishing, can solve the problems of excessive loss of auxiliary materials, high wafer surface roughness, and low polishing efficiency, and achieve the effects of saving production costs, improving polishing efficiency and polishing quality

Inactive Publication Date: 2016-03-09
LENS TECH CHANGSHA
View PDF5 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a polishing liquid for A-direction sapphire polishing, so as to solve the technical problems of low polishing efficiency, high wafer surface roughness, and excessive loss of auxiliary materials that generally exist in the process of processing A-direction sapphire workpieces.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing solution for A orientation sapphire polishing, and preparation method thereof
  • Polishing solution for A orientation sapphire polishing, and preparation method thereof
  • Polishing solution for A orientation sapphire polishing, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Formula (percentage by weight):

[0026] 92-97 parts of silica sol, 0.01-1 part of active dispersant, 0.01-1 part of wetting agent, 0.01-2 parts of polishing aid, 0.01-1 part of oxidizing agent, 0.01-2 parts of pH regulator, and the balance for deionized water.

[0027] During preparation, it is completed by the following process steps:

[0028] A. Use a 500-mesh screen filter system to remove impurity particles in the silica sol raw material;

[0029] B. Stir the above-mentioned filtered 35-55 wt% silica sol at a speed of 60-120 rpm, and then add active dispersant, wetting agent and polishing aid at a flow rate of 0.5-2.0 L / min;

[0030] C. Continue to add the oxidizing agent and the pH regulator at a flow rate of 0.5-2.0 L / min, and adjust the pH value to 9.5-11, and obtain the finished polishing solution after purification.

[0031] The following examples adopt the same preparation method as Example 1, and the specific substances and weight percentages used in its ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a polishing solution for A orientation sapphire polishing, and a preparation method thereof. The polishing solution comprises, by mass, 92-97 parts of silica sol, 0.01-1 part of an active dispersant, 0.01-1 part of a wetting agent, 0.01-2 parts of a polishing aid, 0.01-1 part of an oxidant, 0.01-2 parts of a pH adjusting agent, and the balance of deionized water. The polishing solution prepared in the invention has the advantages of good removal rate, excellent lubrication effect, good quality of the surface of a processed product in the sapphire polishing processing process, simple processing and preparation method, and facilitation of industrial popularization.

Description

technical field [0001] The invention relates to the technical field of sapphire polishing, in particular to a polishing liquid for A-direction sapphire polishing and a preparation method thereof. Background technique [0002] Sapphire, also known as white gemstone, has the molecular formula Al 2 o 3 , is a multifunctional oxide crystal with a hexagonal crystal structure, which has excellent optical properties, physical properties and chemical properties. Compared with natural gemstones, it has the characteristics of high hardness, high melting point, good light transmission, excellent thermal conductivity and electrical insulation, good wear resistance, and stable corrosion resistance, so it is widely used in optoelectronics, communications, and national defense. and other fields. Sapphire crystal (α-Al 2 o 3 ) is a simple coordination oxide crystal of the hexagonal system, and many characteristics are determined by its crystal orientation. If a four-axis oriented coor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 周群飞饶桥兵杨水莲
Owner LENS TECH CHANGSHA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products