Preparation method of in-situ growth graphene/carbon nano tube reinforced Ti-based brazing filler metal
A technology of in-situ growth of carbon nanotubes, applied in the direction of welding/cutting media/materials, welding media, metal processing equipment, etc., can solve problems such as difficulty in uniform dispersion, poor high-temperature mechanical properties, high thermal expansion coefficient, etc., and achieve lower working temperature , excellent high temperature strength, and the effect of improving high temperature mechanical properties
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specific Embodiment approach 1
[0029] Specific embodiment one: the in-situ growth graphene / carbon nanotube described in the present embodiment strengthens the method for Ti-based solder, specifically carries out according to the following steps:
[0030] 1. Ni(NO 3 ) 2 ·6H 2 O and TiH 2 The powder is mixed in absolute ethanol, then magnetically stirred at a temperature of 80°C to 100°C until the absolute ethanol is completely volatilized, and then ground to obtain Ni(NO 3 ) 2 ·TiH 2 Composite powder;
[0031] The Ni(NO 3 ) 2 ·6H 2 O and TiH 2 The mass ratio of powder is 1:(1~10);
[0032] Second, the Ni(NO 3 ) 2 ·TiH 2 The composite powder is placed in a plasma-enhanced chemical vapor deposition vacuum device, evacuated to below 5Pa, and hydrogen gas is introduced at a gas flow rate of 10sccm to 40sccm, and the pressure in the plasma-enhanced chemical vapor deposition vacuum device is adjusted to 100Pa to 400Pa. 100Pa~400Pa and hydrogen atmosphere, the temperature is raised to 500℃~560℃ at a h...
specific Embodiment approach 2
[0049] Specific embodiment two: the difference between this embodiment and specific embodiment one is that in step two, the gas flow rate is 20sccm to pass into hydrogen gas, and the pressure in the plasma enhanced chemical vapor deposition vacuum device is adjusted to be 300Pa, and when the pressure is 300Pa and hydrogen gas Under the atmosphere, the temperature was raised to 520° C. at a heating rate of 20° C. / min. Others are the same as in the first embodiment.
specific Embodiment approach 3
[0050] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that in step 2, the gas flow rate is 25 sccm to feed hydrogen, and the pressure in the plasma-enhanced chemical vapor deposition vacuum device is adjusted to be 200 Pa, and at the pressure The temperature was raised to 550° C. at a rate of 20° C. / min under a hydrogen atmosphere of 200 Pa. Others are the same as in the first or second embodiment.
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