AlGaN/GaN heterojunction field effect transistor and preparation method thereof

Abstract

The invention relates to an AlGaN / GaN heterojunction field effect transistor and a preparation method thereof. The field effect transistor comprises a grid, a source, a drain, a substrate, an epitaxial structure and an insulated dielectric layer, wherein the drain, the substrate and the epitaxial structure are orderly arranged in a stacking form; the epitaxial structure comprises a n type GaN layer, a vertical super junction layer, a channel layer and a barrier layer, which are orderly stacked; the vertical super junction layer comprises alternatively arranged light-doped p type GaN layer and heavy-doped n type GaN layer, the heavy-doped n type GaN layer is thinner than the light-doped p type GaN layer, and the channel layer and the barrier layer are stacked on the light-doped p type GaN layer. The field effect transistor is simple in structure; performance deterioration of devices caused by complex device processing is avoided; stability is guaranteed; and relatively high forward current transmission ability and backward high voltage endurance of devices are realized simultaneously.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to an AlGaN / GaN heterojunction field effect transistor and a preparation method thereof. Background technique [0002] In modern society, power electronics technology continues to keep up with new developments, and power electronic devices such as voltage regulators, rectifiers, and inverters are more and more widely used in daily life, involving high-voltage power supply, power management, factory automation, and energy distribution management for motor vehicles. and many other fields. Diodes and switching devices are an integral part of power electronics applications. In recent years, Schottky diodes with high frequency, high current and low power consumption have attracted more and more attention due to their unique performance advantages. [0003] Traditional power Schottky diodes are mainly fabricated on silicon (Si)-based materials. The development of silicon materials has a long h...

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Problems solved by technology

The epitaxial process of the device structure is also very difficult, and it is difficult to guide the development and production of the actual device. At the same time, the gate Schottky metal in the structure is easy to break down under reverse high voltage, which affects the improvement of the withstand voltage performance of the device.

[0009] From the research and analysis of the above existing technical solutions, from the horizontal conduction structure to the vertical conduction structure, the application of super junction is reflected, but there is no technical solution that is relatively easy for industrial production.

The main disadvantages are: 1. The process has great damage to the crystal quality. The superjunction structure realized by the ion implantation process is very close to the GaN heterojunction active region, which has a great impact on the current transmission capability of the device. While withstand voltage, the output characteristics of larger devices are sacrificed; 2. The device structure is complex, and the actual device process is difficult to implement, which is not conducive to industrialization promotion

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