Light-stimulated neural electrode device based on golden wire ball bonding method and manufacturing method thereof
A technology of gold wire ball bonding and light stimulation, which is applied in the field of microelectrodes, can solve the problems of troublesome operation, high cost, high requirements for equipment, process and alignment accuracy, and achieve the effect of simple process
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Embodiment 1
[0039] Such as figure 1 As shown, the present embodiment provides a light-stimulating nerve electrode device based on the gold wire ball bonding method, including: a bottom polyimide insulating layer 1, a gold circuit layer 2, a top polyimide insulating layer 3, a bare micro-LED Chip 4, high temperature resistant instant adhesive 5, gold wire 7, epoxy resin glue 8; wherein: the cathode and anode pads 6 belong to a part of the micro LED bare chip 4, the gold pad 9 belongs to a part of the gold circuit layer 2, and the gold pad 9 belongs to the gold circuit layer 2. The circuit layer 2 is used to supply power to the micro-LED bare chip 4, and the forward voltage is 2.7-3.4V; the bottom polyimide insulating layer 1, the gold circuit layer 2, and the top polyimide insulating layer 3 constitute the main structure of the electrode , the bottom polyimide insulating layer 1 and the top polyimide insulating layer 3 are provided with an overlapping array of square holes for positioning ...
Embodiment 2
[0056] This embodiment provides a method for preparing a light-stimulating nerve electrode device based on the gold wire ball bonding method similar to that of Embodiment 1, which is prepared according to the following steps:
[0057] 1) Thermally evaporate a layer of 1.0 mm thick aluminum on a 200 micron thick silicon wafer as a sacrificial layer;
[0058] 2) Spin-coat a layer of photosensitive polyimide Durimide7510. After pre-baking, exposure, development and curing, a patterned bottom polyimide insulating layer 1 is produced, with a thickness of 5 microns and 4×4 holes on it. Rectangular hole, the size of the rectangular hole is 205 microns × 255 microns;
[0059] 3) Sputter a layer of chromium and a layer of gold, the thickness of chromium and gold are 50 nanometers and 300 nanometers respectively, spin-coat the positive photoresist AZ4620 with a thickness of 5 microns, and after pre-baking, photolithography, development and post-baking, use Ion beam etching method to ob...
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