Injection locked frequency divider based on Lange coupler feedback structure

Abstract

The invention discloses a high-end injection locked frequency divider suitable for millimeter wave frequencies of a CMOS (Complementary Metal-Oxide-Semiconductor) process and a BiCMOS process. The injection locked frequency divider is characterized in that a 140GHz signal and a low-frequency signal are separated through a broadband working feature of a Lange coupler and a high isolation degree between a straight-through port and a coupling port of the Lange coupler in order to obtain a higher output power level; and moreover, phase compensation is performed through a delay line, and a common-emitter common-base transistor structure is adopted, so that a high loop gain is provided, and an isolation degree between an input signal and a feedback signal is increased. Through use of a feedback loop consisting of the Lange coupler, a phase compensation module and a common-emitter common-base transistor circuit, the frequency divider has higher working efficiency, a wide frequency locking range, a high frequency dividing ratio and low power consumption. Thus, the high-end injection locked frequency divider has a great application value in millimeter-wave, particularly millimeter-wave frequency high-end frequency divider circuits. Besides, a frequency dividing circuit can be applied to a circuit system in a terahertz frequency band, but a higher frequency dividing ratio is required.

Description

technical field [0001] The invention relates to the technical field of millimeter wave / submillimeter wave frequency division in semiconductor technology, in particular to an injection-locked frequency divider based on a lange coupler feedback structure. Background technique [0002] Millimeter waves have the advantages of high frequency, wide bandwidth, and large information capacity. They have great application value and market prospects in military radar systems, radio astronomy, space, and short-distance wireless high-speed transmission. And with the rapid development of modern silicon-based processes, processes such as CMOS and SiGeBiCMOS can be used in submillimeter wave / terahertz systems, which replace III-V semiconductor processes that are limited by high cost and low integration. In a high-frequency communication system, the performance of the high-stable frequency source provided by the phase-locked loop affects the performance of the entire system, and the frequenc...

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Problems solved by technology

in the references 【4】 in, such as Figure 4 As shown, this paper demonstrates a CMOS injection-locked divider with multiple division ratios of 3, 6, and 9; the operating frequency is from 2.2GHz to 30.95GHz; however, when the division ratio is 9, its locking range is reduced To 260MHz, the power consumption is 12.5mW; and the locking range will decrease with the increase of operating frequency

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