Flux technology growth apparatus and method of rare earth doped orthophosphate crystals

An orthophosphate, rare earth doping technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve problems such as damage to the health of experimenters, unfavorable growth of high-quality crystals, and inferior lead pyrophosphate systems, etc. Achieve the effect of avoiding crystal size and quality decline, avoiding pollution and injury to experimenters, and easy operation.

Inactive Publication Date: 2016-04-27
QINGDAO UNIV
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Problems solved by technology

Lead-containing fluxes have high solubility to most materials and a good temperature coefficient of solubility. They are a type of flux commonly used in crystal growth by flux method. Taking the most common lead oxide as an example, its temperature of several hundred degrees Celsius It will volatilize at high temperature, and there will be a large saturated vapor pressure at 1200 degrees Celsius. The volatilization of lead compounds into the air will pollute the atmosphere and damage the health of experimenters
Therefore, researchers continue to explore new lead-free flux systems, but have not yet found a new flux system with comparable performance to lead-containing fluxes. Therefore, the transformation of experimental equipment to solve the adverse effects of lead-containing fluxes will affect crystal growth and The exploration of new crystals is of great significance
[0003] Commonly used rare earth-doped orthophosphate flux systems are lead pyrophosphate, tungstate and molybdate systems, among which tungstate and molybdate have a relatively comp

Method used

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  • Flux technology growth apparatus and method of rare earth doped orthophosphate crystals

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Embodiment

[0018] The main structure of this embodiment includes a loam cake 1, thread 2, outer wall 3 and inner wall 4; the outer wall 3 made of platinum material is cylindrical, the height of the outer wall 3 is 2.5 times its radius, and its thickness is 0.1 times its radius The outer wall 3 and the inner wall 4 are integral structures, and the bottom of the inner wall 4 is a hemispherical structure; the top of the outer wall 3 is provided with a thread 2, and the upper cover 1 is screwed on the outer wall 3 by the thread 2 to seal the whole device.

[0019] In this embodiment, the process of crystal growth using a flux method growth device doped with rare earth orthophosphate crystals is as follows:

[0020] (1), lead oxide and lead fluoride are weighed according to the ratio that molar ratio is 15:85 and are evenly mixed and pressed into cylindrical block structure to obtain flux;

[0021] (2), YbPO4 and YPO4 are weighed and uniformly mixed to obtain a mixture according to the molar ...

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Abstract

The invention belongs to the technical field of monocrystal growth, relates to an apparatus suitable for flux technology monocrystal growth, and especially relates to a flux technology growth apparatus and a method of rare earth doped orthophosphate crystals. The method comprises the following steps: mixing lead oxide with lead fluoride, compacting the lead oxide with lead fluoride to form a cylindrical block structure in order to obtain a flux, disposing a YbPO4 and YPO4 mixture in the bottom of an inner wall, compacting the mixture, and disposing the flux on the mixture; and screw-capping an upper cover on an outer wall, sealing the upper cover, disposing the growth apparatus in a heating furnace, adjusting the temperature of the heating furnace, heating to 800DEG C, and sequentially cooling to 750DEG C, 700DEG C, 600DEG C, 500DEG C and room temperature to end crystal growth. The apparatus adopted in the invention has the advantages of simple structure, convenient operation, low cost, less energy consumption, reduction of the energy loss due to reduction of the crystal growth temperature to 400DEG C, high dimensions and high quality of grown crystals, reduction of discharge of toxic substances, and environmental protection.

Description

Technical field: [0001] The invention belongs to the technical field of single crystal growth, and relates to a device suitable for single crystal growth by a flux method, in particular to a rare earth-doped orthophosphate crystal growth device and method by a flux method. Background technique: [0002] At present, in the crystal growth of the flux method, the platinum crucible used is generally open or covered, and the growth system is open or semi-open. During the crystal growth process, high temperature will cause volatilization of substances. Lead-containing fluxes have high solubility to most materials and a good temperature coefficient of solubility. They are a type of flux commonly used in crystal growth by flux method. Taking the most common lead oxide as an example, its temperature of several hundred degrees Celsius It will volatilize at high temperature, and there will be a large saturated vapor pressure at 1200 degrees Celsius. The volatilization of lead compounds...

Claims

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Application Information

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IPC IPC(8): C30B29/14C30B9/12
CPCC30B9/12C30B29/14
Inventor 滕冰钟德高张世明姜学军孔伟金杨利廷于萌华景贺琳
Owner QINGDAO UNIV
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