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Raw material treatment method for growing 4H high-purity silicon carbide monocrystal form by stable PVT (physical vapor transport) process

A high-purity silicon carbide, raw material processing technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve problems such as dislocations reducing device performance

Active Publication Date: 2016-05-04
BEIJING CENTURY GOLDRAY SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is easy to produce polytype during the growth process, and the defects such as dislocations and micropipes brought by polytype greatly reduce the performance of the device prepared by it.

Method used

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  • Raw material treatment method for growing 4H high-purity silicon carbide monocrystal form by stable PVT (physical vapor transport) process
  • Raw material treatment method for growing 4H high-purity silicon carbide monocrystal form by stable PVT (physical vapor transport) process
  • Raw material treatment method for growing 4H high-purity silicon carbide monocrystal form by stable PVT (physical vapor transport) process

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0022] Example 1: CVD furnace reaction temperature 1150°C, Ar / CH 4 : 800 / 50 (sccm / min), the pressure inside the graphite crucible is controlled at 3000pa, and the reaction takes 20 minutes. Place the obtained silicon carbide powder in a graphite crucible, fix the 4H-SiC seed crystal on the crucible lid above the powder, and pass Ar gas or gas mixed with H2 into the single crystal furnace to charge to 40,000-80,000 Pa, the temperature is controlled between 2100-2300°C for crystal growth of 4H-SiC crystal form. After slicing the crystals, use Raman spectroscopic analysis to test the crystal form, such as figure 1 As shown, the crystal form is 95% stable.

example 2

[0023] Example 2: CVD furnace reaction temperature 1200°C, Ar / CH 4 : 800 / 50 (sccm / min), the pressure inside the graphite crucible is controlled at 2000pa, and the reaction takes 20 minutes. Place the obtained silicon carbide powder in a graphite crucible, fix the 4H-SiC seed crystal on the crucible lid above the powder, and pass Ar gas or gas mixed with H2 into the single crystal furnace to charge to 40,000-80,000 Pa, the temperature is controlled between 2100-2300°C for crystal growth of 4H-SiC crystal form. After slicing the crystals, use Raman spectroscopic analysis to test the crystal form, such as figure 2 As shown, the crystal form is 100% stable.

example 3

[0024] Example 3: The reaction temperature of CVD furnace is 1150°C, Ar / CH4: 500 / 50 (sccm / min), the pressure inside the graphite crucible is controlled at 2000pa, and the reaction is carried out for 20 minutes. Place the obtained silicon carbide powder in a graphite crucible, fix the 4H-SiC seed crystal on the crucible lid above the powder, and pass Ar gas or gas mixed with H2 into the single crystal furnace to charge to 40,000-80,000 Pa, the temperature is controlled between 2100-2300°C for crystal growth of 4H-SiC crystal form. After slicing the crystals, use Raman spectroscopic analysis to test the crystal form, such as image 3 As shown, the crystal form is 100% stable.

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Abstract

The invention discloses a raw material treatment method for growing a 4H high-purity silicon carbide monocrystal form by a stable PVT (physical vapor transport) process, which comprises the following steps: 1. putting a synthesized silicon carbide powder source in a graphite crucible, and heating with a CVD (chemical vapor deposition) furnace to 1000-1300 DEG C; 2. introducing an Ar (argon)-CH4 (methane) gas mixture into the CVD furnace, regulating the Ar-CH4 mass flow ratio to 1000-1, controlling the pressure at 30000-300Pa, carrying out pyrolysis so that the carbon deposits on the silicon carbide powder surface, rotating and turning the powder so as to be uniformly deposited on the surface, and increasing the reaction time according to the deposition quantity demand; and 3. stopping introducing the CH4 gas, cooling and shutting down the furnace, thereby finally obtaining the pyrolysis-carbon-coated silicon carbide powder. The high-activity deposited carbon in the raw materials is increased to regulate the Si / C component ratio in the silicon carbide growth process, so that the Si in the sublimation component reacts with the carbon on the material surface, thereby finally implementing the stable control on the growth of the 4H-SiC high-purity silicon carbide crystal form by lowering the Si / C ratio in the growth component.

Description

technical field [0001] The invention relates to the technical field of semiconductor growth, in particular to a raw material processing method for growing 4H high-purity silicon carbide single crystal crystal form by a stable PVT (physical vapor deposition) method. Background technique [0002] SiC is one of the third-generation wide-bandgap semiconductor materials. Compared with common semiconductor materials such as Si and GaAs, SiC has excellent performance in terms of bandgap, dielectric breakdown voltage, electron saturation rate, and thermal conductivity. Therefore, SiC is expected to become a material for next-generation energy devices and high-temperature devices that exceed the limit of Si, and accordingly, development of substrate materials is extensively carried out. Especially when applied under extreme conditions and harsh conditions, the characteristics of SiC devices far exceed Si devices and GaAs devices. In the field of optoelectronics, it is also much supe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00C23C16/26C23C16/44
CPCC23C16/26C23C16/4417C30B23/00C30B29/36
Inventor 张云伟靳丽婕韩金波
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD