Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of metal halide inorganic perovskite quantum dots

A technology of metal halide and metal halide, which is applied in the direction of chemical instruments and methods, luminescent materials, etc., can solve the problems of large impact on device performance, uneven size of nanosheets, and very large impact, and achieve short reaction time and product formation The effect of high rate and high repetition rate

Active Publication Date: 2016-06-08
NANJING UNIV OF SCI & TECH
View PDF0 Cites 52 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

YichuanLing et al. prepared organic perovskite nanosheets by ligand modification-assisted precipitation method. However, the size of nanosheets prepared by this method is not uniform, and there are many impurities, which have a great impact on device performance (LingY, et al.BrightLight ‐EmittingDiodesBasedonOrganometalHalidePerovskiteNanoplatelets[J].AdvancedMaterials,2016,28(2):305-311.)
The morphology of all-inorganic perovskite nanocrystal materials has a great influence on the performance of devices, and the study of adjusting the morphology of all-inorganic perovskite nanocrystal materials to regulate their performance has not yet appeared.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of metal halide inorganic perovskite quantum dots
  • Preparation method of metal halide inorganic perovskite quantum dots
  • Preparation method of metal halide inorganic perovskite quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Step 1. Add 80mL of toluene to a 100mL round-bottomed flask respectively. At room temperature, turn on magnetic stirring at a stirring speed of 800r / min. Heat and stir in air without inert gas protection;

[0030] Step 2, metal halide salt PbBr 2 Dissolve CsBr and CsBr in 2mL DMSO at a molar ratio of 1:1, ultrasonically dissolve the metal halide salt completely, and the concentration of the metal halide salt is 1mol / L;

[0031] Step 3. Add 0.1-1 mL of oleic acid as a surfactant to the DMSO solution of the metal halide salt, and mix the solution evenly;

[0032] Step 4. Quickly inject the mixed solution prepared in step 3 into the heated and stirred toluene, centrifuge the obtained reaction product at 8000r / min for 3min, remove the supernatant, and redisperse the precipitate in toluene to obtain CsPbBr 3 Nanocrystalline quantum dots.

[0033] The CsPbBr that this embodiment makes 3 The morphology of nanocrystalline quantum dots is as figure 1 As shown, its photolumin...

Embodiment 2

[0035] This embodiment is the same as embodiment 1, the only difference is that the reaction solvent in step 1 is isopropanol, and others are the same as embodiment 1.

[0036] The CsPbBr that this embodiment makes 3 The morphology of nanocrystalline quantum dots is as figure 2 As shown, its photoluminescence diagram is shown in Figure 10 Curve 2, the emission wavelength is 521.9nm.

Embodiment 3

[0038] This embodiment is the same as Example 1, except that the reaction solvent in step 1 is acetone, and the others are the same as Example 1.

[0039] The CsPbBr that this embodiment makes 3 The morphology of nanocrystalline quantum dots is as image 3 As shown, its photoluminescence diagram is shown in Figure 10 Curve 3, the emission wavelength is 522.0nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
emission peakaaaaaaaaaa
emission peakaaaaaaaaaa
emission peakaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of metal halide inorganic perovskite quantum dots. The method includes the steps of firstly, dissolving metal halide salt BX2 and AX in DMSO, and adding surface active agents; secondly, rapidly injecting the mixed liquid in reaction solvent; thirdly, making BX2 and AX rapidly react under the effect of the surface active agent to generate the ABX3 type metal halide inorganic perovskite quantum dots of different morphologies. According to the method, in the low-temperature solution method system, by using different surface active agents and reaction solvent for changing the morphologies of the metal halide inorganic perovskite quantum dots, the performance of the metal halide inorganic perovskite quantum dots is regulated and controlled, and the method has profound significance in constructing high-performance full-solution photoelectric devices.

Description

technical field [0001] The invention relates to a method for preparing metal halide inorganic perovskite quantum dots, belonging to the technical field of new material preparation. Background technique [0002] Solution-synthesized electronic materials have attracted extensive attention due to their low-cost process, lightweight and scalable fabrication. The photoconversion efficiency of organic metal halide perovskite materials synthesized in liquid phase can reach more than 20%, with a wide luminescence spectrum, high carrier mobility, small exciton binding energy, and large diffusion length, suitable for the preparation of high Optoelectronic devices with quantum efficiency, tunable optical bandgap, and ultrahigh carrier mobility have become a very promising semiconductor material. [0003] At present, there are many methods for the synthesis of metal perovskite quantum dots. The morphology of the prepared organic perovskite and inorganic perovskite materials is cubic, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/66
CPCC09K11/665
Inventor 宋继中薛洁许蕾梦曾海波王涛李建海
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com