Surface-modified SiC nano wire, preparation method and applications thereof
A surface modification and nanowire technology, applied in chemical instruments and methods, climate sustainability, sustainable manufacturing/processing, etc., can solve problems such as poor interface bonding, low surface activity, and difficult dispersion, and achieve low cost, The effect of easy control and simple preparation process
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specific Embodiment approach 1
[0018] Specific implementation mode 1: The method for surface modification of SiC nanometers provided in this implementation mode is realized through the following steps:
[0019] Place the SiC nanowires in a tubular sintering furnace or a heating device that can protect the atmosphere, feed a mixed flow of oxygen and nitrogen, control the oxygen flow rate to 5-500ml / min, and the nitrogen flow rate to 5-1000ml / min, and then start heating. Heating from room temperature to 700-1400° C., controlling the heating rate to 5-20° C. / min, and holding time to 30-120 minutes can obtain the surface-modified SiC nanowires. The surface-modified SiC nanowire is a one-dimensional nanomaterial with a core-shell structure, the core is SiC, and the outer layer is SiO 2 , SiO 2 Closely coated on the outside of SiC to form a dense coating layer, in which SiO 2 The cladding layer is amorphous, and the bonding at the interface is close bonding at the atomic scale. According to the diameter scale ...
specific Embodiment approach 2
[0021] Embodiment 2: The difference between this embodiment and Embodiment 1 is that SiO 2 The layer thickness is 10~200nm.
specific Embodiment approach 3
[0022] Specific implementation mode three: the difference between this implementation mode and specific implementation modes one and two is that SiO 2 The layer thickness is 10~100nm.
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