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Surface-modified SiC nano wire, preparation method and applications thereof

A surface modification and nanowire technology, applied in chemical instruments and methods, climate sustainability, sustainable manufacturing/processing, etc., can solve problems such as poor interface bonding, low surface activity, and difficult dispersion, and achieve low cost, The effect of easy control and simple preparation process

Inactive Publication Date: 2016-07-06
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of low surface activity, poor interfacial bonding, difficult dispersion and easy oxidation of existing silicon carbide nanowires during use, the present invention provides a surface-modified SiC nanowire and its preparation method and application

Method used

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  • Surface-modified SiC nano wire, preparation method and applications thereof
  • Surface-modified SiC nano wire, preparation method and applications thereof

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Experimental program
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specific Embodiment approach 1

[0018] Specific implementation mode 1: The method for surface modification of SiC nanometers provided in this implementation mode is realized through the following steps:

[0019] Place the SiC nanowires in a tubular sintering furnace or a heating device that can protect the atmosphere, feed a mixed flow of oxygen and nitrogen, control the oxygen flow rate to 5-500ml / min, and the nitrogen flow rate to 5-1000ml / min, and then start heating. Heating from room temperature to 700-1400° C., controlling the heating rate to 5-20° C. / min, and holding time to 30-120 minutes can obtain the surface-modified SiC nanowires. The surface-modified SiC nanowire is a one-dimensional nanomaterial with a core-shell structure, the core is SiC, and the outer layer is SiO 2 , SiO 2 Closely coated on the outside of SiC to form a dense coating layer, in which SiO 2 The cladding layer is amorphous, and the bonding at the interface is close bonding at the atomic scale. According to the diameter scale ...

specific Embodiment approach 2

[0021] Embodiment 2: The difference between this embodiment and Embodiment 1 is that SiO 2 The layer thickness is 10~200nm.

specific Embodiment approach 3

[0022] Specific implementation mode three: the difference between this implementation mode and specific implementation modes one and two is that SiO 2 The layer thickness is 10~100nm.

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Abstract

The invention discloses a surface-modified SiC nano wire, a preparation method and applications thereof. The preparation method comprises the following steps: placing SiC nano wires into a tubular sintering furnace or a heating device with an atmosphere protection function; introducing a mixed air flow of oxygen and nitrogen, heating to raise the temperature from the room temperature to 700-1400 DEG C, controlling the heating rate at 5-20 DEG C / min, and maintaining the temperature for 30 to 120 minutes to obtain the surface-modified SiC nano wires. The surface modified SiC nano wires are a one-dimensional nano material with a core-shell structure, wherein the core is composed of SiC, and the shell is made of SiO2. SiO2 is tightly wrapped on SiC to form a compact coating layer, which is in an amorphous state. The interfaces are tightly combined in the atomic level. The thickness of the SiO2 coating layer can be controlled in a range of 2 to 500 nm. The problems that conventional silicon carbide nano wires have the disadvantages of low activity, difficulty in dispersing, easiness for oxidation, and bad interface bonding are solved. The provided surface-modified SiC nano wire has the advantages of simple preparation technology, energy saving, environment-friendliness, easy control, low cost, and high yield.

Description

technical field [0001] The invention relates to a surface-modified one-dimensional nanometer material, a preparation method and an application. Background technique [0002] In recent years, research work on SiC nanowires has attracted much attention. SiC nanowires are considered as ideal reinforcements for composite materials because of their excellent mechanical properties and physical and chemical stability; All have broad application prospects. Therefore, scholars have carried out a lot of research work on SiC nanowires, especially on the preparation and performance of nanowires. [0003] However, when nanowires (tubes) reinforce resin-based composites, they generally have problems such as difficulty in dispersion, poor wettability, and poor interfacial bonding. They often cannot effectively enhance and toughen, and even lead to a significant decline in the mechanical properties of composites. This is exactly one of the biggest challenges facing SiC nanowires in the f...

Claims

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Application Information

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IPC IPC(8): C09C1/28C09C3/06
CPCC01P2004/16C01P2004/80C09C1/0081C09C1/28C09C3/06Y02P20/10
Inventor 张晓东杨路路周宇航闫旭黄小萧温广武侯思民赵义刘文会刘璐
Owner HARBIN INST OF TECH
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