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Zr-doped Ge2Sb2Te5 thin-film material for phase change memory and preparation method of Zr-doped Ge2Sb2Te5 thin-film material

A phase-change memory and thin-film material technology, applied in electrical components and other directions, can solve the problems of short data storage life, low crystallization temperature, poor thermal stability, etc., achieve low production cost, uniform and dense film quality, and meet application requirements. Effect

Active Publication Date: 2016-07-06
NINGBO UNIV
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  • Abstract
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Problems solved by technology

Due to the low crystallization temperature and poor thermal stability of traditional GST materials, the data of PRAM memory cells using GST materials as storage media can only be stored for 10 years at about 80°C, and the data storage life at high temperatures is short, so GST cannot meet this requirement. Require

Method used

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  • Zr-doped Ge2Sb2Te5 thin-film material for phase change memory and preparation method of Zr-doped Ge2Sb2Te5 thin-film material

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preparation example Construction

[0024] A Zr-doped Ge for phase-change memory 2 Sb 2 Te 5 Thin film material, its chemical structure is Zr x (Ge 2 Sb 2 Te 5 ) 100-x , where 06 ~10 8 Ω, crystalline resistance 10 3 ~10 4 Ω. Its preparation method is as follows: using high-purity round Zr simple substance and Ge 2 Sb 2 Te 5 As the target material, a magnetron sputtering device is used, a double-target co-sputtering method is adopted, high-purity argon is used as the working gas, and quartz wafers or silicon wafers are used as the substrate material for surface deposition. The specific steps are as follows:

[0025] (1) will Ge 2 Sb 2 Te 5 The round block glass target and the back of the Zr simple target are completely attached to a copper sheet with the same diameter as the glass target and a thickness of 1mm to obtain a magnetron sputtering coating target; the Zr single target is installed on the magnetron In the DC DC sputtering target, the Ge 2 Sb 2 Te 5 The target is installed in the magne...

Embodiment 1

[0032] A Zr-doped Ge for phase-change memory 2 Sb 2 Te 5 Thin film material, its preparation method is as follows:

[0033] (1) Using Ge 2 Sb 2 Te 5 Co-sputtering coating with Zr single-substance double targets: the Zr single-substance target is installed in the magnetron DC sputtering target, and the Ge 2 Sb 2 Te 5 The target is installed in the magnetron radio frequency sputtering target; vacuumize the sputtering chamber, when the vacuum degree in the sputtering chamber reaches 2×10 - - -4 Pa, fill the chamber with high-purity argon gas, the flow rate of argon gas is 50.0ml / min, until the glow pressure required for sputtering is 0.3Pa in the chamber; turn on the radio frequency power supply, and after the glow is stable, adjust the location of the Zr element The DC sputtering target power is 3W, Ge 2 Sb 2 Te 5 The magnetron radio frequency sputtering power where the target is located is 60W. After the power is stabilized, the substrate turntable is turned on and ...

Embodiment 2

[0037] Same as Example 1, the difference is that the DC sputtering target power where the Zr simple substance is adjusted is 5W, and the Ge 2 Sb 2 Te 5 The magnetron radio frequency sputtering power where the target is located is 60W.

[0038] The Zr-doped Ge prepared in the above-mentioned embodiment 1 2 Sb 2 Te 5 The film composition is measured by X-ray Energy Spectroscopy (EDS), and the film thickness is measured by a step meter. The test results are: the film composition is Zr 6 (GST) 94 , film thickness is 235nm.

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Abstract

The invention discloses a Zr-doped Ge2Sb2Te5 thin-film material for a phase change memory and a preparation method of the Zr-doped Ge2Sb2Te5 thin-film material. The Zr-doped Ge2Sb2Te5 thin-film material is characterized in that a chemical structural formula is Zrx(Ge2Sb2Te5)(100-x), wherein x is smaller than to 20 and greater than to 0. The preparation method comprises the following specific steps: adopting a high-purity round block Zr element and Ge2Sb2Te5 as target materials, with high-purity argon as a working gas and a quartz plate or a silicon wafer as a substrate material, carrying out surface deposition by a magnetron sputtering apparatus and a double-target co-sputtering method; adjusting the DC sputtering power of the Zr element target to be 3-9W and the radio-frequency sputtering power of the Ge2Sb2Te5 target to be 60W; and carrying out co-sputtering at a room temperature for 15 minutes and then obtaining the Zr-doped Ge2Sb2Te5 thin-film material. The Zr-doped Ge2Sb2Te5 thin-film material has the advantages of relatively high crystallization temperature and data retentivity, relatively high crystallization speed, relatively high amorphous / crystalline resistance ratio and relatively good heat stability.

Description

technical field [0001] The invention relates to the field of phase-change memory materials, in particular to a Zr-doped Ge for phase-change memory 2 Sb 2 Te 5 Thin film materials and methods for their preparation. Background technique [0002] With the rapid development of computer technology, mobile communication and digital products, the demand for non-volatile semiconductor memory has increased significantly. At present, the mainstream of the non-volatile memory market is flash memory, but flash memory itself has some shortcomings, such as long write time (>10μs) and low cycle times (~10 6 ), making it difficult to meet the requirements of future semiconductor memory development for higher erasing speed and storage density. In addition, due to the basic requirements for storing charges, the floating gate cannot be thinned without limit, and there are great technical difficulties in breaking through the 45nm semiconductor process. . PCRAM is increasingly attracting...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/026H10N70/8828
Inventor 李增光吕业刚马亚东沈祥王国祥戴世勋
Owner NINGBO UNIV
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