On-chip integrated polarization beam splitter and polarization beam splitting method thereof

Abstract

The invention provides an on-chip integrated polarization beam splitter and a polarization beam splitting method thereof. The on-chip integrated polarization beam splitter comprises a hybrid plasma waveguide, a coupling waveguide, an S-bend waveguide and an output silicon waveguide, wherein the coupling waveguide, the S-bend waveguide and the output silicon waveguide are located on the same side of the hybrid plasma waveguide, are sequentially connected in series and are equal in thickness. The hybrid plasma waveguide is divided into a metal coverage layer, an upper silicon dioxide layer, a silicon nitride waveguide layer, a lower silicon dioxide layer and a silicon waveguide layer from top to bottom. The coupling waveguide, the S-bend waveguide and the output silicon waveguide are equal to the silicon waveguide layer in thickness. The coupling waveguide is a silicon waveguide. After input signals including transverse electric modes and transverse magnetic modes enter a coupling zone, transverse electric mode light signals are coupled to the taper-type coupling waveguide and then are output through the S-bend waveguide and the output silicon waveguide, and the transverse magnetic mode light signals are directly transmitted along the hybrid plasma waveguide and are directly output, and waveguide coupling does not occur. The on-chip integrated polarization beam splitter has the advantages of being small in size, compact in structure, high in polarization extinction ratio, low in insertion loss, larger in working bandwidth and the like.

Description

technical field [0001] The invention relates to the technical field of integrated optics, in particular to an on-chip integrated polarization beam splitter and a polarization beam splitting method thereof. Background technique [0002] In recent years, photonic integrated circuit technology has received extensive attention from researchers, and the most important material platform is silicon-on-insulator (SOI) based on high refractive index difference waveguide structure. However, the structure with high refractive index difference will bring strong polarization sensitivity to the device and system, especially when the optical signal is coupled from the optical fiber to the waveguide chip, since the polarization state in the optical fiber changes randomly, the polarization problem will be changed. is particularly prominent. At present, on-chip polarization diversity schemes are mainly used to solve the polarization sensitivity problem of high refractive index difference wav...

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Problems solved by technology

However, due to its low refractive index (about 2.0), the limitation of the optical signal mode field is low, resulting in the need for a larger waveguide size to carry the optical signal mode

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