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Preparation method of cerium oxide and CMP polishing solution containing cerium oxide abrasive

A technology of cerium oxide and cerium source, applied in the field of CMP polishing application, to achieve the effect of regular morphology and excellent STI polishing characteristics

Inactive Publication Date: 2016-07-27
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are few reports on the controlled synthesis of cerium oxide abrasive properties based on the application requirements of STI polishing.

Method used

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  • Preparation method of cerium oxide and CMP polishing solution containing cerium oxide abrasive
  • Preparation method of cerium oxide and CMP polishing solution containing cerium oxide abrasive
  • Preparation method of cerium oxide and CMP polishing solution containing cerium oxide abrasive

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Under room temperature conditions, first PVP (average molecular weight is 10000) and cerium nitrate are dissolved and mixed to obtain the first composition, then the precipitating agent ammonium carbonate is added in the first composition, and a precipitation reaction occurs. The concentration of PVP in the reaction system is 0.05M, the concentrations of cerium nitrate and ammonium carbonate are 0.05M and 0.075M respectively. After the precipitant is added, the reaction system is kept stirring for 30 minutes, and the mixed sample is further hydrothermally crystallized at 150°C for 0.5 hours. The obtained precipitate After washing with pure water for 3 times, filtering to obtain the filter cake and drying, the cerium carbonate powder was obtained; the obtained cerium carbonate powder was further roasted in static air at 400°C for 10 hours, and the cerium oxide powder was obtained after cooling; by adding polyacrylic acid as Dispersant, the obtained cerium oxide powder is ...

Embodiment 2

[0030] Under room temperature conditions, first dissolve and mix PVA (average molecular weight is 1000) and cerium acetate to obtain the first composition, then add the precipitating agent ammonium bicarbonate to the first composition to carry out precipitation reaction, the concentration of PVA in the reaction system The concentration of cerium acetate and ammonium bicarbonate is 0.1M, the concentration of cerium acetate and ammonium bicarbonate is 1.0M and 4.0M respectively, after the precipitant is added, the reaction system is kept stirring for 30 minutes, and the mixed sample is hydrothermally crystallized at 80°C for 10 hours, and the obtained The precipitate was washed 3 times with pure water, filtered to obtain a filter cake and dried to obtain cerium carbonate powder; the obtained cerium carbonate powder was further roasted in static air at 900°C for 0.5 hours, and cooled to obtain cerium oxide powder; by adding poly Acrylic acid is used as a dispersant, and the obtain...

Embodiment 3

[0032] Under room temperature conditions, first PEG (average molecular weight is 3000) and cerium acetate are dissolved and mixed to obtain the first composition, and then the precipitating agent ammonium carbonate is added to the first composition to carry out the precipitation reaction. The concentration of PEG in the reaction system is 0.25M, the concentrations of cerium acetate and ammonium carbonate are 0.5M and 1.5M respectively, after the precipitant is added, keep the reaction system stirring for 30 minutes, then hydrothermally crystallize the mixed sample at 120°C for 8 hours, and the obtained precipitate After washing with pure water for 3 times, filtering to obtain the filter cake and drying to obtain cerium carbonate powder; the obtained cerium carbonate powder was further roasted in static air at 600°C for 4 hours, and then cooled to obtain cerium oxide powder; by adding polyacrylic acid as As a dispersant, the obtained cerium oxide powder is subjected to ball mill...

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Abstract

The invention discloses a preparation method of cerium oxide. Reactants are preferably selected and preparation technology is optimally designed, cerium oxide particles have uniform particle dimensions, and mechanical forces are used for easily dispersing cerium oxide particles in a liquid phase; the CMP polishing solution which employs cerium oxide as an abrasive shows excellent planarizing and polishing efficiency in STI polishing applications.

Description

technical field [0001] The invention discloses a preparation method of cerium oxide and its application in CMP polishing. Background technique [0002] Cerium oxide is a kind of chemical mechanical polishing abrasive that has attracted wide attention in recent years, mainly because of its high polishing activity to silicon dioxide, and it can achieve high polishing effect at a low solid content. Therefore, chemical mechanical polishing fluids using cerium oxide as abrasives have greater application prospects and market advantages compared with traditional silicon oxide or aluminum oxide materials in terms of performance and cost. [0003] At present, there have been a lot of reports on the application of cerium oxide as an abrasive in the polishing of shallow trench isolation (STI) process. For example, patent 201310495424.5 reports a chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) process. The composition uses cerium oxide as the abrasive...

Claims

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Application Information

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IPC IPC(8): C01F17/00C09G1/02C09K3/14B82Y40/00
Inventor 尹先升贾长征房庆华周仁杰王雨春
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD