Method for cutting SiC monocrystal with size being six inches or larger through diamond wire and diamond mortar at same time

Abstract

A method for cutting a SiC monocrystal with the size being six inches or larger through a diamond wire and diamond mortar at the same time includes the steps that the diamond wire dipped in the diamond mortar is adopted for cutting the SiC monocrystal. In the method, a cutting wire is electrically plated with diamond particles on the diamond wire, the diamond particles cannot be thrown out along with high-speed movement of the diamond wire and can make contact with the SiC crystal all the time, and the profile quality of a SiC cutting disk is guaranteed; and meanwhile, diamond abrasive particles in the diamond mortar are clamped and embedded at the positions of gaps between the diamond particles solidified on the surface of the diamond wire and are brought into the SiC crystal at high speed along with the diamond wire, the SiC crystal is cut by the diamond wire and the diamond mortar, and therefore the cutting efficiency is improved.

Description

technical field [0001] The invention relates to a method for simultaneously cutting SiC single crystals of 6 inches or more by using diamond wire and diamond mortar, and belongs to the technical field of crystal material processing. Background technique [0002] SiC semiconductor material is the third-generation semiconductor material developed after elemental semiconductor Si, Ge and compound semiconductor GaAs, InP, etc. As a member of wide-bandgap semiconductor materials, SiC has the characteristics of high critical breakdown field strength, good thermal stability, high carrier saturation drift velocity, and high thermal conductivity. key material. At present, SiC plays an important role with its excellent semiconductor performance in the fields of optoelectronic devices, microelectronic devices and power electronic devices. [0003] In order to reduce the manufacturing cost of the device, through the development of technology and the improvement of the process, China h...

AI Technical Summary

Problems solved by technology

However, in this method, when the size of the SiC single crystal reaches 6 inches or more, the contact area between the diamond wire and the SiC single crystal becomes larger, and the diamond particles are severely worn. In order to ensure the cutting quality, a new diamond wire needs to be replaced every time. , while the price of diamond wire is expensive, resulting in a significant increase in the cost of cutting SiC single crystals using this method

Therefore, this method is not conducive to large-scale cutting of SiC crystals with a size of 6 inches and above

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