Method for preparing graphene by combining ultrasonic peeling and jet flow peeling

Abstract

The invention discloses a method for preparing graphene by combining ultrasonic peeling and jet flow peeling. The method comprises the steps that firstly, graphite is dispersed in an aqueous surfactant solution; secondly, the mixed liquid obtained in the first step is subjected to ultrasonic peeling, and multilayer graphene dispersion liquid is obtained; thirdly, the multilayer graphene dispersion liquid obtained in the second step is subjected to jet flow peeling, and monolayer graphene dispersion liquid is obtained; fourthly, the monolayer graphene dispersion liquid obtained in the third step is dried, and the graphene is obtained. According to the preparation method, the ultrasound and jet flow combined peeling mode is adopted for the first time, the obtained graphene in the dispersion liquid has few structural defects and layers and high concentration, the excellent performance of graphene is retained very well, and the graphene can be widely applied to the fields of automotive parts, sensors, conductive materials, heat conduction materials and the like. The method is economical and environmentally friendly, the raw material utilization rate is increased, and the industrialization cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of preparation of graphene functional materials, and in particular relates to a method for preparing graphene by combining ultrasonic stripping and jet stripping. technical background [0002] Since Andre K. Geim (Andre K. Geim) of the University of Manchester in the United Kingdom prepared graphene materials in 2004, due to its unique structure and photoelectric properties, it has received widespread attention. Graphene is a two-dimensional carbon nanomaterial composed of a layer of carbon atoms. It is the thinnest known two-dimensional material, with a thickness of only 0.34nm. Single-layer graphite is considered an ideal material due to its large specific surface area, excellent electrical and thermal conductivity, and low thermal expansion coefficient. It can be widely used in polymer materials, supercapacitors, fibers, electrode materials, electronics and other fields. [0003] At present, the prepara...

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Problems solved by technology

Among them, the quality of graphene prepared by mechanical exfoliation method is the highest, but its yield is very low and can only be used for scientific research; the high cost of ultra-high vacuum graphene epitaxial growth method and the structure of small wafers limit its application; chemical vapor deposition and The graphene prepared by the epitaxial growth method has few defects, but it has high requirements on equipment and low conversion rate of raw materials, which greatly limits its application; although the preparation of graphene by redox method can produce graphene with fewer layers on a large scale, the strong oxidant The damage to the graphene lattice makes it impossible to recover the hexagonal honeycomb crystal structure, resulting in the loss of some of its properties; a large amount of graphene can be synthesized by electrolysis, but the surface of the synthesized graphene has a large number of positive ions or negative ions or Organic matter; ultrasonic exfoliation method uses graphite or expanded graphite as raw material, low equipment requirements, low energy consumption, and the prepared graphene has few defects and high concentration, which is considered to be the most promising preparation method; graphite synthesized by thermal solvent method The purity of alkenes is relatively high, but the reaction time is relatively long, and the yield is only 1-5%.

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