Metallurgical bonding glass-encapsulated diode structure and production method

Abstract

The invention discloses a metallurgical bonding glass-sealed diode structure and a production method thereof. The metallurgical bonding glass-sealed diode structure comprises an electrode A, an electrode B, a chip and a glass tube, wherein the electrode A, the electrode B and the chip are arranged in the glass tube; electrical connection is achieved through diffusion welding between the chip and the electrode A and the electrode B; transition layer materials for diffusion welding are an upper surface metallization layer and a lower surface metallization layer of the chip respectively; and diffusion welding between the chip and the electrode A and the electrode B and sealing of the glass tube are synchronously finished to form a whole. The method comprises component assembling and sintering steps. The metallurgical bonding is achieved between the electrodes and the chip in a high-temperature process; the metallurgical bonding glass-sealed diode structure has the advantages of good heat dissipation performance, high current impact resistance and the like; the working range can be -55 DEG C to 175 DEG C; and the shortages that a metallurgical bonding glass-sealed diode product produced by the prior art is low in positive surge current resistance, reverse transient power resistance and the like are overcome.

Description

technical field [0001] The invention belongs to the technical field of semiconductor element processing, and in particular relates to a metallurgical bonding glass-sealed diode structure and a production method. Background technique [0002] Glass-encapsulated diodes have the characteristics of simple structure, small size, light weight, and low cost. They are widely used in various fields such as household appliances, automotive electronics, and aerospace. However, metallurgical bonded glass-encapsulated diodes produced by existing technologies are usually Due to the structure of Du magnesium wire electrode-silver copper tin solder sheet-chip-silver copper tin solder sheet-Du magnesium wire electrode, there is a large difference in thermal expansion coefficient between Du magnesium wire, silver copper tin solder sheet and chip. , leading to the metallurgical bonded glass-encapsulated diodes produced by the prior art have a narrow operating temperature range, low soldering t...

AI Technical Summary

Problems solved by technology

[0002] Glass-encapsulated diodes have the characteristics of simple structure, small size, light weight, and low cost. They are widely used in various fields such as household appliances, automotive electronics, and aerospace. However, metallurgical bonded glass-encapsulated diodes produced by existing technologies are usually Due to the structure of Du magnesium wire electrode-silver copper tin solder sheet-chip-silver copper tin solder sheet-Du magnesium wire electrode, there is a large difference in thermal expansion coefficient between Du magnesium wire, silver copper tin solder sheet and chip. , leading to the metallurgical bonded glass-encapsulated diodes produced by the prior art have a narrow operating temperature range, low soldering temperature resistance, weak resistance to forward surge current and reverse surge power, and thermal work that can be tolerated less power consumption

It limits its application in large current rectification and Schottky rectifier diodes, TVS products with power of 500W and above, and voltage adjustment diodes with thermal power above 1.5W

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