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Solid electrolyte thin film and preparation method and ion device thereof

A solid electrolyte and thin film technology, which is applied in hybrid capacitor electrolytes, hybrid capacitor electrodes, gaseous chemical plating, etc., can solve the problem of LiPON ion conductance is difficult to significantly improve, achieve stable performance, improve conductivity, and a wide range of applications Effect

Active Publication Date: 2016-08-17
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Subsequent more in-depth research, such as changing the process parameters of LiPON deposition and the content of doped N, but it is difficult to significantly improve the ion conductance of LiPON

Method used

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  • Solid electrolyte thin film and preparation method and ion device thereof
  • Solid electrolyte thin film and preparation method and ion device thereof
  • Solid electrolyte thin film and preparation method and ion device thereof

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preparation example Construction

[0033] The preparation method of the solid electrolyte film disclosed by the invention comprises the following steps:

[0034] Step 1: Use LiHMDS as the lithium source, TMPO as the phosphorus source, TBS as the silicon source, TTIP as the titanium source, and H 2 S is used as the sulfur source, nitrogen plasma is used as the nitrogen source, and ozone is used for the decomposition reaction of metal organic compounds; a capacitive plasma generator is used to generate N 2 Plasma; ozone generator produces O 3 .

[0035] Step 2: Heat the lithium source LiHMDS to 60-65°C, and heat the phosphorus source TMPO to 45-50°C, so that the lithium source LiHMDS, the phosphorus source TMPO, the silicon source TBS, the titanium source TTIP, and the sulfur source H 2 Precursor sources such as S and ozone can be vaporized and volatilized at room temperature 20°C and low pressure; select the corresponding precursor source according to the reaction program, and use high-purity argon as the carr...

Embodiment 1

[0042] ALD technology prepares mixed composite thin film LiPOS, the characteristics of its preparation process: heating lithium source LiHMDS to 60 ℃, heating phosphorus source TMPO to 50 ℃. Use high-purity argon 200mm 3 The flow rate of / S is used as the carrier gas, the supply volume of lithium source LiHMDS for each reaction is 5 μl, the supply volume of phosphorus source TMPO is 10 μl, and the supply volume of H 2 S gas supply flow rate 20mm 3 / S. The reaction time between lithium source LiHMDS and phosphorus source TMPO is 1 second, and the argon gas is purged for 1 second; lithium source LiHMDS and H 2 The reaction time of S gas is 500 milliseconds each time, and the high-purity argon gas is purged for 1 second. The ambient atmosphere of the ALD reaction chamber is high-purity argon, the temperature is controlled at 220°C, and the air pressure is 10mBar.

[0043] After 10 reactions of lithium source LiHMDS and phosphorus source TMPO, the lithium source LiHMDS and H ...

Embodiment 2

[0045] ALD technology prepares mixed composite thin film LiPON, and its preparation process features: heating lithium source LiHMDS to 65 ° C, heating phosphorus source TMPO to 45 ° C. Use high-purity argon 200mm 3The flow rate of / S is used as the carrier gas, and the supply volume of lithium source LiHMDS for each reaction is 5 μl, and the supply volume of phosphorus source TMPO is 10 μl, N 2 Gas supply flow rate 25mm 3 / S, plasma generator power 60W. The reaction time between lithium source LiHMDS and phosphorus source TMPO is 1 second, and argon gas is purged for 1 second; the time for each reaction between lithium source LiHMDS and nitrogen plasma is 2 seconds, and high-purity argon gas is purged for 1 second. The ambient atmosphere of the ALD reaction chamber is high-purity argon, the temperature is controlled at 220°C, and the air pressure is 20mBar.

[0046] After 10 reactions of lithium source LiHMDS and phosphorus source TMPO, lithium source LiHMDS reacts with nit...

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Abstract

The invention discloses a solid electrolyte thin film. The thin film is a composite thin film with Li3PO4 as a base and comprises Li3PO4-Li2S, Li3PO4-Li3N, Li3PO4-TiOx, Li3PO4-Li4SiO4 and other combination manners. The compositing manner of the composite thin film comprises mixed compositing and layered compositing. The ion conductivity of the composite thin film is 5.52*10<-5> mS / cm-1.82 mS / cm. According to the solid electrolyte thin film, Li3PO4 serves as the base and is composited with lithium-containing compounds or compounds where lithium can be embedded easily, and the conductivity of Li3PO4 is greatly improved. The invention further discloses an ion device using the solid electrolyte thin film. The ion device using the solid electrolyte thin film comprises an Au / LiPOS / Li3PO4 / Pt device structure with a diode effect of an ion one-way conducting characteristic, an Au / LiTiPO / LiPOS / Pt device structure which is an ion memristor with a memory characteristic, and an Au / Li / Li3PO4 / LiPOS / Li2S / Pt device structure which is a double-electric-layer capacitor with an energy storage characteristic.

Description

technical field [0001] The invention relates to the technical fields of new energy materials, film growth and devices, in particular to a solid electrolyte film, a preparation method thereof, and an ion device. Background technique [0002] At present, solid-state ionic devices with ions as the main carriers have received extensive attention in the fields of energy, information, and biotechnology. The discovery of new solid electrolytes is the key to promoting a new generation of solid-state ionic devices, among which solid electrolyte thin films have received special attention. However, there are few solid electrolyte films that can be applied at present. Lithium phosphorus oxynitride (LiPON) film is one of them, but its ionic conductivity is relatively low, about 10 -6 S / cm. LiPON is prepared by using Li 3 PO 4 Prepared by magnetron reactive sputtering with nitrogen plasma (X.Yu et al., J.Electrochem.Soc.144(1997)524). Due to the stable electrochemical performance of ...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/30C23C16/34C23C16/40H01G11/56H01G11/50
CPCY02E60/13C23C16/45525C23C16/30C23C16/305C23C16/34C23C16/405H01G11/50H01G11/56
Inventor 孔向阳杨元才
Owner SHANGHAI JIAO TONG UNIV
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