Method for Removing Blue Drug Mark on the Surface of Germanium Single Wafer After Acid Chemical Etching

A technology of sheet acid chemistry and germanium single wafer, applied in chemical instruments and methods, after treatment, crystal growth, etc., can solve problems such as reducing production efficiency, increasing production cost, and affecting production progress, so as to improve production efficiency and save costs , The effect of improving the wafer yield

Active Publication Date: 2018-06-05
云南中科鑫圆晶体材料有限公司 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the HNO3/HF system is the most widely used acid chemical etching system in the wet chemical etching and polishing of germanium single wafers. >After the corrosion of the /HF system, 80% of the wafe

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Taking a 4-inch germanium wafer as an example, the following are the specific implementation steps for removing the blue drug mark on the surface of a 4-inch germanium wafer after being etched by a mixture of nitric acid and hydrofluoric acid:

[0026] (1) Prepare a sodium hydroxide solution with a concentration of 18%. Take 220g of sodium hydroxide with a balance and pour it into a 2000mL beaker, then pour 1000mL of deionized water in proportion, slowly shake the beaker to make the hydroxide After the sodium is fully dissolved, pour it into the reaction tank;

[0027] (2) Add 2548mL of hydrogen peroxide solution with a concentration of 30% to 32% and 5059mL of pure water into the reaction tank filled with 18% sodium hydroxide solution, stir evenly, and cool the temperature of the mixed solution to 12°C;

[0028] (3) Put the 4-inch germanium single chip with blue drug mark on the surface after corrosion into the prepared mixed aqueous solution, and shake it gently from ...

Embodiment 2

[0033] Taking a 6-inch germanium wafer as an example, the following are the specific implementation steps for removing the blue drug mark on the surface of a 6-inch germanium wafer after being etched by a mixture of nitric acid, hydrofluoric acid and acetic acid:

[0034] (1) Prepare a sodium hydroxide solution with a concentration of 18%. Take 150g of sodium hydroxide with a balance and pour it into a 1000mL beaker, then pour 683mL of deionized water in proportion, slowly shake the beaker to make the hydroxide After the sodium is fully dissolved, pour it into the reaction tank;

[0035] (2) Add 2776mL of hydrogen peroxide solution with a concentration of 30% to 32% and 3470mL of pure water into the reaction tank filled with 18% sodium hydroxide solution, stir well, and cool the temperature of the mixture to 16°C;

[0036] (3) Put the 6-inch germanium single chip with blue drug mark on the surface after corrosion into the prepared mixed aqueous solution, and shake it gently fr...

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PUM

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Abstract

The invention relates to a method for removing blue drug mark on the surface of a monocrystalline germanium slice after acidic chemical corrosion. The method comprises the following steps: (1) preparing a mixed aqueous solution of sodium hydroxide and hydrogen peroxide; (2) putting a monocrystalline germanium slice with its surface having blue drug mark formed after corrosion into a prepared aqueous solution for treatment; (3) cleaning the treated monocrystalline germanium slice, and spin-drying; and (4) detecting the surface of the monocrystalline germanium slice with strong light after spin-drying. The method provided by the invention is simple and feasible. By the method, blue drug mark on the surface of the monocrystalline germanium slice after acidic chemical corrosion can be effectively removed. Cost is saved, and production efficiency is greatly raised.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for removing blue drug marks on the surface of a germanium single wafer after acid chemical corrosion. Background technique: [0002] With the rapid development of aerospace technology, higher requirements are put forward for space solar cells. In order to improve the conversion efficiency of GaAs-based multi-junction solar cells and meet the requirements of space use, it is more necessary to have large size, high doping, low dislocation, and high mechanical strength. And germanium single wafers for solar cells with high surface quality. [0003] The processing steps of germanium single wafers for solar cells are divided into rolling, cutting, chamfering, grinding, chemical etching, polishing and cleaning. Among them, the chemical etching process plays a vital role in the mechanical strength of germanium single wafers. It reacts with the surface of g...

Claims

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Application Information

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IPC IPC(8): C30B33/10
CPCC30B33/10
Inventor 何杰肖祥江李苏滨惠峰李雪峰柳廷龙李武芳周一杨海超候振海囤国超田东
Owner 云南中科鑫圆晶体材料有限公司
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