Reactor used for semiconductor single crystal material vapor phase epitaxy growth

Abstract

The invention provides a reactor used for semiconductor single crystal material vapor phase epitaxy growth. The reactor is composed of a baffle, gas inlet pipes, an inverted-trapezoidal truncated cone, gas outlet holes, a metal-containing precursor outlet pipe, and an outer wall. The baffle divides the reactor into an upper-layer zone and a lower-layer zone. Openings are provided at the tops of the gas inlet pipes, such that part of halide gas or halogen gas is preserved at the upper-layer zone of the reactor, and can be subjected to a reaction with a metal source steam escaped from the lower-layer zone to the upper-layer zone. Therefore, the metal source is effectively prevented from mixing into a reaction precursor, and quality and yield of crystals obtained through epitaxy growth are greatly improved. Also, with the inner side wall openings of the gas inlet pipes, the baffle, the inverted-trapezoidal truncated cone and the gas outlet holes, halide or halogen gas flow direction and process can be changed, such that the retention time of the halide or halogen gas in the lower-layer zone is increased. The chance for the halide or halogen gas to contact the metal source is increased, such that the efficiency for the halide or halogen gas to be converted into the metal-containing precursor is not sensitive to the height of metal source liquid level. Therefore, conversion efficiency is stable; epitaxy growth rate and crystal quality are stable and controllable. The reactor facilitates the large-scale production of nitride single crystal materials.

Description

technical field [0001] The invention relates to the field of semiconductor material equipment, in particular to a reactor for vapor phase epitaxial growth of semiconductor single crystal material. Background technique [0002] Group III nitride semiconductor materials (such as GaN, AlN) and their compounds have excellent properties such as large band gap, high thermal conductivity, high pressure resistance and corrosion resistance. They are used in high temperature, high frequency, high power electronic devices and high brightness and high power LED / LD has a huge application prospect. Chemical vapor deposition (CVD, including MOCVD and HVPE) is currently the main method for the epitaxial growth of Group III nitride semiconductor materials. In particular, the hydride vapor phase epitaxy (HVPE) technology has become the mainstream method for growing single crystal GaN materials due to its fast growth rate and simple process. In HVPE technology, halide gas or halogen gas (su...

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Problems solved by technology

[0003] At present, the reactor structure in the HVPE system generally has the problem that the epitaxial growth rate gradually slows down with the consumption of the metal source, which leads to poor repeatability of the process. The height of the liquid level of the liquid metal source is different), and the growth thickness and uniformity of the thickness obtained under the same process conditions will be significantly different

The fundamental reason is that the reactor structure of the HVPE system at this stage cannot guarantee that the probability of converting halide gas or halogen gas into metal-containing precursors is basically the same when the metal source liquid level is at different heights, so that the consistency of the flow field cannot be guaranteed.

As a result, the group III nitride single crystal material grown by HVPE technology has poor consistency and low pass rate, which seriously hinders HVPE technology from being used in large-scale production.

At the same time, a small amount of unconverted metal source vapor will be transported to the growth area or the substrate surface with the carrier gas, forming polycrystals and interfering with crystal growth, causing microcracks or lattice distortion in the epitaxial crystal, which greatly reduces the crystal growth. Quality and Product Yield

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