The invention provides a reactor used for
semiconductor single crystal material
vapor phase epitaxy growth. The reactor is composed of a baffle, gas inlet pipes, an inverted-trapezoidal truncated cone, gas outlet holes, a
metal-containing precursor outlet
pipe, and an outer wall. The baffle divides the reactor into an upper-layer zone and a lower-layer zone. Openings are provided at the tops of the gas inlet pipes, such that part of
halide gas or
halogen gas is preserved at the upper-layer zone of the reactor, and can be subjected to a reaction with a
metal source steam escaped from the lower-layer zone to the upper-layer zone. Therefore, the
metal source is effectively prevented from mixing into a reaction precursor, and quality and yield of crystals obtained through
epitaxy growth are greatly improved. Also, with the inner side wall openings of the gas inlet pipes, the baffle, the inverted-trapezoidal truncated cone and the gas outlet holes,
halide or
halogen gas flow direction and process can be changed, such that the
retention time of the
halide or
halogen gas in the lower-layer zone is increased. The chance for the halide or halogen gas to contact the metal source is increased, such that the efficiency for the halide or halogen gas to be converted into the metal-containing precursor is not sensitive to the height of metal source liquid level. Therefore, conversion efficiency is stable;
epitaxy growth rate and
crystal quality are stable and controllable. The reactor facilitates the large-scale production of
nitride single crystal materials.