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A device and production method for improving performance of cerium-doped scintillation crystal

A technology for scintillation crystals and production methods, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as blackening of iridium crucibles and affecting the integrity of growing crystals, and achieve economical production methods, ensure integrity, and improve performance effect

Active Publication Date: 2018-11-09
江苏晶特晶体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with air annealing, the addition of O during growth 2 did not turn the crystal yellow, so we hope that the growth environment can be rich in O 2 , but Fu O 2 When the iridium crucible is easily oxidized, the iridium drift in the melt will affect the integrity of the normal seeding and growing crystals. When the oxidation is severe, the iridium crucible will even turn black as a whole.

Method used

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  • A device and production method for improving performance of cerium-doped scintillation crystal
  • A device and production method for improving performance of cerium-doped scintillation crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The prepared cerium-doped yttrium lutetium silicate (Lu(1-x)Yx) 2 SiO 5 : The Ce raw material is put into the iridium crucible with the temperature field set up, the seed crystal is installed, and the lifting and rotating mechanism is adjusted;

[0038] Evacuate the air in the furnace cavity to 5Pa, open the second valve 15, and fill with N 2 Shielding gas to 1.01*10 5 Pa~1.2*10 5 Pa;

[0039] Raise the temperature of the chemical material, open the exhaust valve at the lower part of the furnace chamber, and discharge the exhaust gas through the filter bottle. Mix a good proportion of N 2 :CO 2 (CO 2 The concentration is 5%) connected to the first air intake pipe 11, the first valve 14 is opened, the air intake flow is adjusted to 0.5L / min, and the growth crystal is planted;

[0040] For the grown crystals, cut samples of the same size (3.6*3.6*20mm) at the same part, the surface of the sample is fully polished, and stand in a dark room for 12 hours;

[0041] T...

Embodiment 2

[0043] The prepared cerium-doped yttrium lutetium silicate (Lu (1-x) Y x ) 2 SiO 5 : The Ce raw material is put into the iridium crucible with the temperature field set up, the seed crystal is installed, and the lifting and rotating mechanism is adjusted;

[0044] Evacuate the air in the furnace cavity to 5Pa, open the second valve 15, and fill with N 2 Shielding gas to 1.01*10 5 Pa~1.2*10 5 Pa;

[0045] Raise the temperature of the chemical material, open the exhaust valve at the lower part of the furnace chamber, let the exhaust gas flow through the filter bottle, and then discharge the pure CO 2 Connect the first air intake pipe 11, open the first valve 14, adjust the air intake flow rate to 0.05L / min, adjust the second valve 15, the flow rate is 0.5L / min, and plant the growth crystal;

[0046] For the grown crystals, cut samples of the same size (3.6*3.6*20mm) at the same part, the surface of the sample is fully polished, and stand in a dark room for 12 hours;

[0...

Embodiment 3

[0049] The prepared cerium-doped yttrium lutetium silicate (Lu (1-x) Y x ) 2 SiO 5 : The Ce raw material is put into the iridium crucible with the temperature field set up, the seed crystal is installed, and the lifting and rotating mechanism is adjusted;

[0050] Evacuate the air in the furnace cavity to 5Pa, open the second valve 15, and fill with N 2 Protective gas to 1.01*105Pa~1.2*105Pa.

[0051] Raise the temperature of the chemical material, open the gas outlet valve at the lower part of the furnace chamber, and let the exhaust gas flow through the filter bottle. Adjust the flow rate of No. 2 air inlet to 0.5L / min. Mix a good proportion of N 2 :CO 2 (CO 2 Concentration 50%) connected to the first intake pipe 11, open the first valve 14, adjust the intake flow rate to 0.02L / min, plant the growth crystal;

[0052] For the grown crystals, cut samples of the same size (3.6*3.6*20mm) at the same part, the surface of the sample is fully polished, and stand in a dark ...

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Abstract

The invention discloses a device and a production method for improving performance of cerium-doped flashing crystals. The device comprises a furnace cavity and a crucible arranged in the furnace cavity, a heat insulating shell is arranged outside the crucible, a heating device is arranged outside the heat insulating shell, and an opening is formed in the top of the heat insulating shell; a lift rotating mechanism extending into the heat insulating shell is arranged at the top of the furnace cavity, a first air incoming pipe and a second air incoming pipe are arranged on the outer side of the furnace cavity, an exhaust pipe is arranged at the bottom of the furnace cavity, and the cerium-doped flashing crystals are obtained through blanking, inflating, growing, sample treating and testing. A certain amount of CO2 is fed, and CO2 is thermally decomposed at high temperature to obtain O2, so that oxygen vacancy of the crystals is reduced, completeness of crystal lattices is improved, and performance of the cerium-doped flashing crystals is improved.

Description

technical field [0001] The invention relates to the field of crystal production, in particular to a device and a production method for improving the performance of cerium-doped scintillation crystals. Background technique [0002] Scintillation material is a light functional material that absorbs high-energy photons and emits visible light. It is widely used in high-energy physics (such as precision electromagnetic calorimeters), nuclear medicine (such as X-CT, PET and γ cameras), industrial applications (CT flaw detection ), space physics, geological exploration and other fields. At present, inorganic scintillators are the most numerous and widely used, and inorganic scintillators can be divided into intrinsic scintillators and doped scintillators. With people's deeper understanding of scintillation crystals and the development of crystal growth technology, high melting point doped scintillators have become the new generation of scintillation crystals due to their advantag...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/34
CPCC30B15/00C30B29/34
Inventor 吴承戴灵恩周申
Owner 江苏晶特晶体科技有限公司
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