Crystal silicon wafer cutting edge flotation carbon removal method

A technology of cutting edge and crystalline silicon wafer, which is applied in the field of flotation of crystalline silicon wafer cutting edge material, can solve the problems that it is difficult to meet the requirements of crystalline silicon wafer cutting edge material, low purity of silicon carbide micropowder, and cannot be used directly, and achieve particle size concentration Good, enhanced dispersion, easy separation and removal

Inactive Publication Date: 2018-04-24
HENAN XINDAXIN SCI & TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above method has the problems of incomplete carbon removal and low carbon removal efficiency, and the treated silicon carbide micropowder has low purity and poor particle size concentration, which cannot be used directly, and it is difficult to meet the needs of crystal silicon wafer cutting blades

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: According to the following steps, the crystalline silicon chip cutting edge is carried out to remove carbon by flotation:

[0025] (1) Mix the crystalline silicon wafer cutting edge mixed with carbon powder impurities and deionized water with a conductivity of 0.8μs / cm in the flotation cell at a mass ratio of 1:2; then add flotation cells to the flotation cell Sodium dodecylbenzene sulfonate is selected as an agent, and its addition amount is 0.09% of the mass of the crystal silicon wafer cutting blade, and the slurry is heated to 40°C by means of steam heating.

[0026] (2) Start the high-speed rotor at the bottom of the flotation column in the flotation cell, make it rotate and stir in the flotation cell at a speed of 4000 rpm, and mix the crystal silicon wafer cutting blade, flotation agent, and water Uniformly, and continuously introduce compressed air with an external pressure of 6MPa into the flotation cell through the air-introduction hole of the fl...

Embodiment 2

[0032] Example 2: Carry out flotation decarburization of crystal silicon wafer cutting blades in the same manner as in Example 1, the difference is that in step (1), the slurry is heated to 80°C; the flotation agent used is dodecane The amount of sodium phenylsulfonate added is 0.075% of the quality of the crystal silicon wafer cutting edge.

Embodiment 3

[0033] Example 3: Carry out flotation decarburization to the crystalline silicon wafer cutting edge in the same manner as in Example 1, the difference is that the flotation agent used in step (1) is ammonium bicarbonate, and its addition amount is crystalline silicon wafer 0.01% of the mass of the cutting blade, the speed of the high-speed rotor of the flotation column in step (2) is 3000 rpm, and the pressure of the compressed air introduced is 8MPa.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a wafer cutting edge material floatation and decarburization method, and aims to solve the technical problems that an existing wafer cutting edge material decarburization method is not thorough in decarburization and low in decarburization efficiency, and after treatment, obtained silicon carbide micro powder is low in purity, and cannot be used directly. The method comprises the following steps: mixing materials, adding a flotation agent and heating slurry; continuously introducing compressed air to a floatation pond and stirring; removing a carbon powder impurity layer produced by air flotation on the liquid level by a scraping plate; and pumping the slurry into a siphon cylinder, forcedly stirring, hydraulically settling and classifying, then pumping into an inclined tube treating device and a scraper blade centrifugal machine, and respectively carrying out concentrating treatment and centrifugal dehydrating and separating treatment; drying obtained silicon carbide micropowder, and then using the silicon carbide micropowder after the silicon carbide micropowder is sieved by a high-frequency vibration feeder. The method is high in operability, thorough in decarburization and high in efficiency; and the obtained silicon carbide micropowder is high in purity and good in granularity concentration, can be directly used as a wafer cutting edge material, and is high in popularization and application value.

Description

technical field [0001] The invention relates to the technical field of flotation of crystalline silicon wafer cutting edge material, in particular to a method for removing carbon by flotation of crystalline silicon wafer cutting edge material. Background technique [0002] The cutting edge of crystalline silicon wafer is a finer silicon carbide solid micropowder particle with a particle size usually between 5 μm and 15 μm. It is hard and has sharp edges and corners. It is used as a cutting edge for cutting solar crystalline silicon wafer cells. Polysilicon cut into pieces. Crystalline silicon wafer cutting blades are often mixed with impurity carbon powder during the preparation process, and certain measures need to be taken to remove it, and finally obtain silicon carbide micropowder within the specified particle size range. At present, carbon removal often adopts the method of cyclone separation or overflow carbon removal, and additives are added to adjust the pH value, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/956
CPCC01P2004/61C01P2006/80
Inventor 杨梦洁孙毅申君来王杰杨正宏辛玲高敏杰宋中学
Owner HENAN XINDAXIN SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap