Method and system for adjusting pressure of MOCVD reaction chamber and avoiding mist edge of LED epitaxial structure

Abstract

The invention discloses a method and a system for adjusting the pressure of an MOCVD reaction chamber and avoiding mist edge of an LED epitaxial structure. When receiving a signal indicating that an MOCVD device is in an idle state, a positive-pressure generation unit sends a signal to set the flow parameter of a mass flow controller, used for pumping in nitrogen, on the MOCVD device to be a litre, meanwhile, an exhaust butterfly valve on the MOCVD device is adjusted to be closed, a signal indicating the pressure value in the MOCVD reaction chamber, measured by a pressure gage, is received in real time, and whether the pressure value reaches 765-770 torr is determined. When receiving a signal indicating that the pressure value reaches 765-770 torr, a positive-pressure maintaining unit sends a signal to keep the flow rate of the mass flow controller to be a, and the opening angle of the exhaust butterfly valve is increased to enable the gas output of the exhaust butterfly valve and the gas input of the mass flow controller to be balanced. When the MOCVD device is in the idle state, positive pressure is formed in the reaction chamber, so that air and water are prevented from entering the reaction chamber, mist edge of the epitaxial structure is avoided, and accordingly, the problem of capacity loss caused by recovery in the prior art is solved.

Description

technical field [0001] The invention relates to a method and a system for overcoming the fog edge of an LED epitaxial structure, in particular to a method and a system for adjusting the pressure of an MOCVD reaction chamber to overcome the fog edge of an LED epitaxial structure. Background technique [0002] A light-emitting diode (LED) is an electronic component that can convert electrical energy into light energy. It includes a PN junction like an ordinary diode, and it also has unidirectional conductivity. The holes injected into the N region and the electrons injected from the N region into the P region recombine within a few microns near the PN junction to produce spontaneous emission fluorescence; the energy states of electrons and holes in different semiconductor materials are different, When electrons and holes recombine, the amount of energy released is different. The more energy released, the shorter the wavelength of the light emitted. Commonly used are diodes tha...

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Problems solved by technology

[0003] At present, the LED epitaxial structure growth technology mainly adopts metal organic chemical vapor deposition method, which is realized by MOCVD equipment. After the epitaxial wafer is grown, the surface is generally very smooth; however, some models are used, such as K465i / C4 MOCVD equipment for LED epitaxial structure When growing, the final product often has the problem of fog edge, that is, the crystal on the surface of the epitaxial structure looks like white fog, the product quality is low, and needs to be improved

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