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Superhydrophobic molecular enrichment and concentration chip and its preparation method and application

A super-hydrophobic and enrichment technology, which is applied in the direction of material analysis, material excitation analysis, and material analysis through optical means, can solve the problems of inability to obtain high-sensitivity substrates, and achieve the effect of low solvent loss rate

Active Publication Date: 2018-08-14
INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide an ultra-sensitive, fast-response, and low-solvent loss rate superhydrophobic molecular enrichment and concentration chip, which can solve the problem that the current simple process cannot obtain a highly sensitive substrate

Method used

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  • Superhydrophobic molecular enrichment and concentration chip and its preparation method and application
  • Superhydrophobic molecular enrichment and concentration chip and its preparation method and application
  • Superhydrophobic molecular enrichment and concentration chip and its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0047] Step 1: Preparation of template

[0048] The cleaned silicon wafer is subjected to adhesion-increasing treatment, and the photoresist is evenly coated on the silicon wafer, and then baked; then the baked silicon wafer and the pattern on the photoresist board are pre-aligned and automatically aligned. Bit operation, after the bit alignment is completed, exposure treatment is performed, and then development treatment is carried out to obtain a silicon wafer with a uniform array structure pattern with a pitch of 2 microns × 2 microns ( figure 1 ), and then carry out deep silicon etching to the silicon wafer. The deep silicon etching depth is 30 microns, and the silicon wafer with a uniform silicon column array structure with an etching depth of 30 microns and a silicon column spacing of 2 microns×2 microns is obtained ( figure 2 ), and then by magnetron sputtering, the crystal film Au is sprayed on the silicon chip of the silicon column array structure to obtain the templ...

Embodiment 2

[0058] Step 1: Preparation of template

[0059] The cleaned silicon wafer is subjected to adhesion-increasing treatment, and the photoresist is evenly coated on the silicon wafer, and then baked; then the baked silicon wafer and the pattern on the photoresist board are pre-aligned and automatically aligned. Bit operation, after the bit alignment is completed, exposure treatment is carried out, and then development treatment is carried out to obtain a silicon wafer with a uniform array structure pattern with a pitch of 4 microns × 4 microns ( Figure 7 ), and then carry out deep silicon etching to the silicon wafer. The deep silicon etching depth is 30 microns, and the silicon wafer with a uniform silicon column array structure with an etching depth of 10 microns and a silicon column spacing of 4 microns×4 microns is obtained ( Figure 8 ), and then by magnetron sputtering, the crystal film Au is sprayed on the silicon chip of the silicon column array structure to obtain the te...

Embodiment 3

[0066] Step 1: Preparation of template

[0067] The cleaned silicon wafer is subjected to adhesion-increasing treatment, and the photoresist is evenly coated on the silicon wafer, and then baked; then the baked silicon wafer and the pattern on the photoresist board are pre-aligned and automatically aligned. Bit operation, after the bit alignment is completed, exposure treatment is performed, and then development treatment is carried out to obtain a silicon wafer with a uniform array structure pattern with a pitch of 2 microns × 2 microns ( Figure 12 ), and then carry out deep silicon etching to the silicon wafer. The deep silicon etching depth is 30 microns, and the silicon wafer with a uniform silicon column array structure with an etching depth of 10 microns and a silicon column spacing of 2 microns×2 microns is obtained ( Figure 13 ), and then by magnetron sputtering, the crystal film Au is sprayed on the silicon chip of the silicon column array structure to obtain the te...

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Abstract

The invention discloses a super-hydrophobic chip for enrichment and condensation of molecules as well as a preparation method and an application thereof. The preparation method comprises the following steps: tackifying treatment of a silicon chip which is cleaned is carried out, photoresist is uniformly glued on a silicon chip, and baking is carried out; pre-positioning of the baked silicon chip is carried out for a pattern on a photoetching board and automatic para-position operation is carried out, after pre-positioning is carried out, exposure treatment is carried out, developing treatment is carried out, deep silicon etching treatment is carried out for the silicon chip, crystal film Au is injected on the silicon chip with a silicon column array structure by magnetron sputtering, in order to obtain a template material; graphite which is cleaned is used as a cathode, the template material is used as an anode, the cathode and the anode are placed in an electrodeposition solution in order to obtain a chip with a nanometer silver silicon column array structure, the chip is taken out and cleaned with clear water, and pure argon is used for blowing and drying. The super-hydrophobic chip for enrichment and condensation of molecules has the advantages of hypersensitiveness, fast response, and low loss rate of solvents.

Description

technical field [0001] The invention relates to a preparation method of a super-hydrophobic chip, in particular to a super-hydrophobic molecular enrichment and concentration chip, its preparation method and application. Background technique [0002] Surface Enhanced Raman Scattering (Surface Enhanced Raman Scattering, hereinafter referred to as SERS) technology is a new type of high-sensitivity spectral analysis technology that was discovered in the 1970s and matured after the 1990s. The basis of SERS technology is that the Raman spectrum signal of material molecules can be greatly enhanced on the surface of specific metal nanomaterials (such as gold, silver, copper, etc. 6 ~10 10 times). In a nutshell, the outstanding advantages of SERS technology are manifested in three aspects: 1) It has extremely high sensitivity, and single-molecule SERS analysis has been widely reported; 2) Similar to infrared spectroscopy, it can be used for qualitative analysis of substances, that ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/65B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00G01N21/658
Inventor 何璇刘渝罗毅威王慧
Owner INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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