Cadmium-telluride thin-film solar battery and preparation method thereof

A technology of solar cells and cadmium telluride, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reduced conversion efficiency of cells, performance deterioration of thin-film solar cells, and 2´ performance degradation of transparent conductive layers, etc.

Inactive Publication Date: 2016-11-09
盐城普兰特新能源有限公司
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  • Description
  • Claims
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Problems solved by technology

If the substrate 1' is a glass substrate, the sodium ions in the glass substrate 1' will diffuse into the transparent conductive layer 2' when the transparent conductive layer 2' is heat-treated, which will cause the performance of the transparent conductive layer 2' to decline; When the window layer 4´, the CdTe light absorbing layer 5´ and the subsequent heat treatment of the light absorbing

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  • Cadmium-telluride thin-film solar battery and preparation method thereof
  • Cadmium-telluride thin-film solar battery and preparation method thereof
  • Cadmium-telluride thin-film solar battery and preparation method thereof

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preparation example Construction

[0033] The invention also discloses a method for preparing a cadmium telluride thin film solar cell, comprising the following steps

[0034] S1, preparing a glass substrate 1;

[0035] S2, sequentially prepare a laminated structure, transparent conductive layer 2, buffer layer 3, n-type semiconductor layer 4, p-type semiconductor layer 5, back contact layer 6 and back electrode layer on the glass substrate 1 along the direction away from the glass substrate 1 7. The laminate structure includes a suppression layer 8 and a dielectric layer, the suppression layer 8 is prepared on the glass substrate 1, the dielectric layer is prepared between the suppression layer 8 and the transparent conductive layer 2, and the suppression layer 8 contains Si and O elements, and the suppression layer 8 also contains at least one element of Al and B and at least one element of Li and K, and the suppression layer 8 and the dielectric layer have light transmission.

Embodiment 1

[0038] Form a 35nm suppression layer 8 on the surface of the glass substrate 1, the suppression layer 8 contains Si, O, B, Li elements; then form a 50nm silicon dioxide film layer on the suppression layer 8 as a low refractive index material layer 9 ; Then form a 400nm aluminum-doped zinc oxide film layer on the silicon dioxide film layer 9 as a transparent conductive layer 2; then form a 70nm zinc oxide film layer on the aluminum-doped zinc oxide film layer 2 as a buffer layer 3; then Form the cadmium sulfide film layer of 100nm on the zinc oxide film layer 3 as the n-type semiconductor layer 4; then form the cadmium telluride film layer of 2um on the cadmium sulfide film layer 4 as the p-type semiconductor layer 5; Layer 5 is subjected to cadmium chloride vapor heat treatment; then a 100nm copper-doped cadmium telluride film layer is formed on the cadmium telluride film layer 5 as the back contact layer 6; then a 300nm metal The molybdenum layer serves as the back electrode ...

Embodiment 2

[0041] Form a layer of 40nm suppression layer 8 on the surface of the glass substrate 1, the suppression layer 8 contains Si, O, B, K elements; then form a 60nm silicon dioxide film layer on the suppression layer 8 as a low refractive index material layer 9 ; Then form a 400nm aluminum-doped zinc oxide film layer on the silicon dioxide film layer 9 as a transparent conductive layer 2; then form a 60nm zinc oxide film layer on the aluminum-doped zinc oxide film layer 2 as a buffer layer 3; then Form the cadmium sulfide film layer of 110nm on the zinc oxide film layer 3 as the n-type semiconductor layer 4; then form the cadmium telluride film layer of 2um on the cadmium sulfide film layer 4 as the p-type semiconductor layer 5; Layer 5 is subjected to cadmium chloride vapor heat treatment; then an 80nm copper-doped cadmium telluride film layer is formed on the cadmium telluride film layer 5 as the back contact layer 6; then a 350nm metal The molybdenum layer serves as the back el...

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Abstract

The invention, which belongs to the technical field of the solar battery, discloses a cadmium-telluride thin-film solar battery comprising a glass substrate, a lamination structure, a transparent conductive layer, a buffer layer, an n type semiconductor layer, a p type semiconductor layer, a back contact layer and a back electrode layer. The lamination structure, the transparent conductive layer, the buffer layer, the n type semiconductor layer, the p type semiconductor layer, the back contact layer and the back electrode layer are arranged on the glass substrate successively along a direction far away from the glass substrate. The lamination structure consist of an inhibition layer and a dielectric medium layer; the inhibition layer is arranged on the glass substrate; the dielectric medium layer is arranged between the inhibition layer and the transparent conductive layer; the inhibition layer contains Si and O elements as well as at least one of a Al element and a B element and at least one of a Li element and a K element; and the inhibition layer and the dielectric medium layer have light-transmitting properties. In addition, the invention also discloses a preparation method for the cadmium-telluride thin-film solar battery. The lamination layer structure is set and is used as a front contact element of the cadmium-telluride thin-film solar battery, so that the short-circuit current of the cadmium-telluride thin-film solar battery is increased.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, and in particular relates to a cadmium telluride thin-film solar cell and a preparation method thereof. Background technique [0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Cadmium telluride is a P-type semiconductor material with a direct band gap and a high absorption coefficient. As a new generation of thin-film solar cells, cadmium telluride thin-film solar cells have the advantages of low cost, stable performance, strong radiation resistance, and power generation...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/18
CPCH01L31/0352H01L31/1828Y02E10/543Y02P70/50
Inventor 李艺明邓国云李浩
Owner 盐城普兰特新能源有限公司
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