Unlock instant, AI-driven research and patent intelligence for your innovation.

Two-step dry etching method based on nanoimprint grating and epitaxial wafer and laser

A technology of nanoimprinting and dry etching, which is applied in the field of dry etching process, epitaxial wafer and laser, and can solve the problem of low selection ratio of etching materials and masks, removal of etching products of grating morphology, and ICP power setting Improper and other problems, to achieve excellent etching results, good single-mode and wavelength stability, the effect of precise depth control

Active Publication Date: 2019-09-24
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are many factors affecting the etching results in the plasma etching process. If the gas system is not selected properly, not only the rate is difficult to control, but also isotropic etching may be formed; if the chamber pressure or ICP power is not set properly, the etching material The selection ratio of the mask and the mask is too low, and drilling and etching are prone to occur; and various factors affect each other, the difficulty is that it is difficult to find a set of optimal etching parameters
At present, the biggest problem in plasma dry etching grating is the control of grating shape and the removal of etching products.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Two-step dry etching method based on nanoimprint grating and epitaxial wafer and laser
  • Two-step dry etching method based on nanoimprint grating and epitaxial wafer and laser
  • Two-step dry etching method based on nanoimprint grating and epitaxial wafer and laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The two-step dry etching method based on the nanoimprint grating of the present invention, such as figure 1 shown, including the following steps:

[0032] Step 1: Take an epitaxial wafer that has completed one epitaxy, the material of the grating layer is GaInP, and the thickness is about 200nm.

[0033] Step 2: Coating ultraviolet photoresist on the surface of the epitaxial wafer, and embossing a grating pattern on the photoresist on the surface of the epitaxial wafer through a nanoimprint process.

[0034] Step 3: Clean the ICP reaction chamber to ensure that the chamber is clean and free from contamination. use 2 and SF 6 Mixed gas treatment for 3 minutes, and then O 2 Treatment for 3 minutes is mainly to remove residual organic polymers in the ICP reaction chamber. The cleaning procedure uses 100W of RF power and 1500W of inductively coupled power.

[0035] Step 4: Send the epitaxial wafer with the imprinted grating pattern into the cleaned ICP reaction chambe...

Embodiment 2

[0047] The two-step dry etching method based on the nanoimprint grating of the present invention, such as figure 1 shown, including the following steps:

[0048] Step 1: Take an epitaxial wafer that has completed one epitaxy, the material of the grating layer is GaInP, and the thickness is about 200nm.

[0049] Step 2: Coating ultraviolet photoresist on the surface of the epitaxial wafer, and embossing a grating pattern on the photoresist on the surface of the epitaxial wafer through a nanoimprint process.

[0050] Step 3: Clean the ICP reaction chamber to ensure that the chamber is clean and free from contamination. use 2 and SF 6 Mixed gas treatment for 3 minutes, and then O 2 Treatment for 3 minutes is mainly to remove residual organic polymers in the ICP reaction chamber. The cleaning procedure uses 100W of RF power and 1500W of inductively coupled power.

[0051] Step 4: Send the epitaxial wafer with the imprinted grating pattern into the cleaned ICP reaction chambe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a nano-impression-grating-based two-step dry etching method, an epitaxial wafer, and a laser. The method comprises: a grating graph is pressed on a GaInP material by using an ultraviolet nanometer impression technology; a pressed sample is sent into ICP equipment to carry out primary etching, wherein reactant gas CH4 / H2 / Ar is used; second etching is carried out on the sample with reactant gas H2 / Ar to obtain a grating graph by etching; the sample is processed by oxygen plasma to clean away residual polymer deposited on the etched surface and side wall; and then the sample is placed into a negative photoresist membrane-removing agent and heating processing is carried out for 8 to 15 minutes, washing is carried out repeatedly by using deionized water, and then cleaning is carried out by multiple times by using isopropanol, thereby completing cleaning. According to the method, mixed gas of CH4 / H2 / Ar and H2 / Ar is used for carrying out two-step etching on the GaInP grating; and non-volatility etching products at the etched surface and side wall can be removed effectively by optimizing various etching parameters, so that an excellent etching result is obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers and relates to a dry etching process, in particular to a two-step dry etching method based on nano-imprinted gratings and an epitaxial wafer and a laser produced therefrom. Background technique [0002] Distributed feedback semiconductor laser (DFB-LD) is a semiconductor laser that adds a Bragg grating inside the device and uses a structure with a periodically changing refractive index to realize light feedback. The grating inside the device has the functions of mode selection and narrowing of the laser spectrum, and the drift coefficient of the laser spectrum with temperature and operating current is much smaller than that of ordinary lasers. The coupling coefficient of the Bragg grating has a great influence on the side mode suppression ratio and slope efficiency of the laser, and the coupling coefficient is related to many factors such as the number of grating stages, the shape of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/02
Inventor 王海丽赵懿昊张奇仲莉刘素平马骁宇
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI