Method for directly growing hemimorphite zinc silicate on glass substrate

A technology of glass substrate and zinc silicate, applied in the direction of coating, etc., can solve problems such as complex reaction system, achieve the effect of simplifying reaction system, easy control, and less process parameters

Inactive Publication Date: 2016-11-23
KUNMING UNIV OF SCI & TECH
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Problems solved by technology

In the existing preparation technology, the material is usually synthesized from zinc salts, silicon salts, surfactants and other salts that provide doping elements through solid-phase, gas-phase and liquid-phase methods. It is composed of three or more salt substances, the quantity control of the reactants is strictly required, and the reaction system is relatively complicated

Method used

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  • Method for directly growing hemimorphite zinc silicate on glass substrate
  • Method for directly growing hemimorphite zinc silicate on glass substrate
  • Method for directly growing hemimorphite zinc silicate on glass substrate

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Embodiment 1

[0029] Such as figure 1 As shown, a method for directly growing hemimorphite zinc silicate on a glass substrate mainly includes the following steps:

[0030] Step 1, weigh 0.2724g of zinc chloride and 0.0227g of cetyltrimethylammonium bromide respectively, and dissolve them with 22ml of distilled water respectively.

[0031] Step 2: Pour the dissolved zinc chloride solution into the cetyltrimethylammonium bromide solution for mixing, and stir at room temperature for 20 minutes to obtain a completely dissolved, transparent and colorless mixed solution.

[0032] Step 3, add 1.6 g of ammonia water with a mass fraction of 25% to the transparent and colorless mixed solution obtained in step 2, and continue stirring at room temperature for 2 hours after a suspension appears.

[0033] In step 4, prepare the glass slide that has been ultrasonically cleaned with distilled water, cleaned with absolute ethanol, and dried as the substrate for the growth of zinc silicate.

[0034] Step 5...

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Abstract

The invention belongs to the technical field of inorganic synthesis, and specifically relates to a method for directly growing hemimorphite zinc silicate on a glass substrate, comprising the following steps: taking zinc chloride, cetyltrimethylammonium bromide, and Dissolve in distilled water; Dissolve and mix separately; Add ammonia water and stir to obtain a suspension; Prepare a clean glass slide as a substrate and put it into the suspension; Put it in an autoclave and keep it warm; Take out the slide after keeping warm ; Put the glass slide into the sintering furnace and sinter to obtain hemimorphite zinc silicate. In the above method, silicon element is provided by the substrate, and the hemimorphite zinc silicate can be prepared without adding additional silicon-containing compound raw materials, which is simple, easy to operate, and easy to control.

Description

technical field [0001] The invention belongs to the technical field of inorganic synthesis, and in particular relates to a method for directly growing hemimorphite zinc silicate on a glass substrate. Background technique [0002] The chemical properties of zinc silicate inorganic minerals are stable, the energy gap is 5.5eV, the exciton binding energy is 75meV, and the light transmission in the ultraviolet and visible region is good. It is an ideal matrix material, so it is widely used in the corrosion resistance of steel Protection, fluorescent powder materials, cathode ray tubes, plasma display panels, laser crystals, up-conversion luminescent materials, electroluminescent devices and catalysts, etc. In the existing preparation technology, the material is usually synthesized from zinc salts, silicon salts, surfactants and other salts that provide doping elements through solid-phase, gas-phase and liquid-phase methods. It is composed of three or more salt substances, the q...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C01B33/20
CPCC03C17/22C01B33/20C01P2002/72C01P2002/85C01P2004/03C01P2006/80C03C17/006C03C2217/42
Inventor 种晓宇冯晶李双燕蒋业华周荣
Owner KUNMING UNIV OF SCI & TECH
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