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Sapphire Wafer Etching and Polishing Composite Processing Method

A sapphire wafer, composite processing technology, applied in metal processing equipment, manufacturing tools, grinding devices, etc., can solve problems such as damage and low polishing efficiency

Active Publication Date: 2018-02-23
HUAQIAO UNIVERSITY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If a finer particle size abrasive is used for precision polishing, the polishing efficiency is very low, but if a coarser particle size abrasive is used for rough polishing, a certain damage layer will be produced

Method used

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  • Sapphire Wafer Etching and Polishing Composite Processing Method
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  • Sapphire Wafer Etching and Polishing Composite Processing Method

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specific Embodiment approach

[0036] In the specific embodiment: the corrosion temperature of the first corrosion step and the second corrosion step is 275°C-290°C; the abrasive used in the rough polishing step and the fine polishing step is diamond, silicon carbide, aluminum oxide, carbide At least one of boron, the abrasive particle size is 100-120um; the abrasive particle size used in the rough polishing step is coarser than the abrasive particle size used in the fine polishing step; the rough polishing step uses free abrasive polishing or fixed In the way of disc polishing, the polishing time of the rough polishing step is 10-15 minutes; the fine polishing step adopts chemical mechanical polishing (CMP polishing), and the polishing time of the fine polishing step is 5-10 minutes.

[0037] Furthermore, the workpiece fixture needs to choose a material that is resistant to strong acid and high temperature (above 350°C), such as quartz glass. Furthermore, according to the processing requirements of the sap...

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PUM

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Abstract

The invention discloses an etching and polishing combined machining method for a sapphire wafer. According to the etching and polishing combined machining method for the sapphire wafer, primary etching, rough polishing, secondary etching and fine polishing are conducted on the wafer with the double sides being polished in a combined manner, wherein affected layers generated after double-sided polishing are removed in a short time through strong acid etching firstly; secondly, a small affected layer is generated on the surface of the wafer through rough polishing lasting for a short time; thirdly, each surface of the wafer is smooth after secondary strong acid etching; and finally, the wafer surfaces which are ultra-smooth and free of damage and meet requirements can be obtained through short-time fine polishing. By the adoption of the etching and polishing combined machining method for the sapphire wafer, the wafer surfaces which are ultra-smooth and free of damage can be rapidly obtained, the polishing efficiency of the sapphire wafer is greatly improved, the production cost can be reduced on the premise of improving the machining speed, and the product yield is improved.

Description

technical field [0001] The invention relates to the field of semiconductor material processing, in particular to a sapphire wafer corrosion-polishing composite processing method. Background technique [0002] Sapphire is widely used in high-speed integrated circuits, Laser chip communication, LED, high-speed missile fairing, mobile phone screen, optical components, medical sapphire blades, high-temperature and high-strength structural components and other military and civilian fields. In these applications, precision or even ultra-precision processing is required on the surface of sapphire parts, especially when sapphire is used as the LED substrate and window material, the surface of the workpiece is required to be ultra-smooth without damage. However, sapphire is a typical hard and brittle material. Its hardness is second only to diamond, and its Mohs hardness reaches 9. It is very difficult to process it. It is easy to cause processing damage during processing, and the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04B24B37/10
CPCB24B37/042B24B37/10
Inventor 方从富徐西鹏胡中伟陈瑜谢斌晖陈铭欣
Owner HUAQIAO UNIVERSITY