An uncooled infrared 3D MEMS system structure and manufacturing method thereof

Abstract

The invention relates to an uncooled infrared 3D MEMS system structure and a manufacturing method thereof, and relates to the field of uncooled infrared 3D MEMS structures. The purpose is to use the new MEMS structure to solve the problem that the traditional structure cannot be flattened due to the reduction of the pixel size, and to solve the problem of the difficulty of metal interconnection caused by the multi-layer process, and to solve the problem that the pixel size of the device is reduced as much as possible. The area of ​​vanadium oxide is maintained and the thermal conductivity of the bridge legs is reduced to ensure that the performance of the device is not degraded, and the honeycomb structure is adopted to increase the infrared absorption factor. A groove is provided in the middle of the dielectric layer, and the reflective layer is located on the upper surface of the groove in the middle of the dielectric layer. Above the reflective layer are a first sacrificial layer and a second sacrificial layer in sequence, and the first sacrificial layer is located in the middle of the dielectric layer. in the groove. The first layer of sacrificial layer structure is buried in the medium of the circuit for fabrication, which is conducive to the subsequent fabrication of small line widths and small pixels.

Description

technical field [0001] The invention relates to the field of uncooled infrared 3D MEMS structures. Background technique [0002] Uncooled infrared detectors (uncooled infrared bolometers) have been widely used in civilian fields, such as fire protection, automotive assistance, forest fire prevention, field detection, and environmental protection, in addition to military applications. [0003] With the widespread promotion of application fields, whether in military or civilian fields, the requirements for imaging quality are getting higher and higher, and the resolution of pixel elements is also required to be higher. It is necessary to increase the pixel density and performance of devices. To improve pixel density and resolution, it is necessary to follow Moore's Law to compress the unit area of ​​pixels, and compressing the unit area of ​​pixels will compress the area and volume of thermal conduction and heat-sensitive films (vanadium oxide and amorphous silicon). Mutual c...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide an uncooled infrared 3D MEMS system structure and its manufacturing method. The purpose is to solve the problem that the traditional structure cannot be flattened due to the reduction of the pixel size after adopting the new MEMS structure, and Solve the problem of difficult metal interconnection caused by the multi-layer process, and solve the problem of maintaining the area of ​​vanadium oxide as much as possible and reducing the thermal conductivity of the bridge legs after the device pixel is reduced, so as to ensure that the device performance is not degraded

Images