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Preparation method for double-chamber MEMS atomic vapor cell

A technology of atomic gas chambers and gas chambers, which is applied in the field of preparation of double-cavity MEMS atomic gas chambers, can solve problems affecting the long-term stability of CPT atomic clocks, difficult engineering implementation, and high difficulty coefficients, so as to achieve mass production and improve Performance, the effect of improving purity

Active Publication Date: 2016-12-14
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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Problems solved by technology

At present, the filling method of alkali metal in the preparation process of MEMS atomic gas chamber is divided into direct filling method of alkali metal and chemical reaction reduction method. The direct filling method of alkali metal is more difficult and difficult to realize in engineering; CPT atomic clock long-term stability

Method used

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  • Preparation method for double-chamber MEMS atomic vapor cell
  • Preparation method for double-chamber MEMS atomic vapor cell
  • Preparation method for double-chamber MEMS atomic vapor cell

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Embodiment Construction

[0023] The present invention will be described in detail below with reference to the drawings and embodiments.

[0024] See Figure 1(a), Figure 1(b), Figure 2(a), Figure 2(b) and image 3 , The preparation method of MEMS atomic gas chamber includes the completion of the 4-inch silicon wafer dual cavity array design and processing, the completion of the bonding of the "glass-silicon wafer-glass" structure, the completion of the cutting and end treatment of a single dual-cavity MEMS atomic gas chamber and the double To connect the cavity-type MEMS atomic gas chamber to the thin glass conduit, the specific steps are as follows:

[0025] (1) Design and processing of dual-cavity MEMS atomic gas chamber 4 inch silicon wafer dual-cavity array:

[0026] a. The wafer uses a silicon wafer with a diameter of 4 inches and a thickness of 1 mm;

[0027] b. Complete the 4-inch silicon wafer dual-cavity array (1) design;

[0028] c. Complete the glass (5)-silicon wafer (6)-glass (7) dual-cavity MEMS a...

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Abstract

The invention discloses a preparation method for a double-chamber MEMS atomic vapor cell. The method provided by the invention has the advantages that an MEMS atomic vapor cell alkali metal filling method, in which bonding is carried out prior to filling, is provided, and the traditional glass vapor cell alkali metal filling method is combined with the MEMS atomic vapor cell preparation technique, so that the performance of the MEMS atomic vapor cell is improved; the preparation method is a beneficial supplement to novel MEMS atomic vapor cell preparation methods, and an exploration of vapor cell preparation methods; the preparation cost for the MEMS atomic vapor cell is reduced; the alkali metal purity in the MEMS atomic vapor cell and the performance of the vapor cell are improved; and batch production can be achieved.

Description

Technical field [0001] The invention belongs to the field of quantum technology related to CPT atomic clocks, CPT atomic gyroscopes, CPT magnetometers and the like, and specifically relates to a method for preparing a double cavity type MEMS atomic gas chamber. Background technique [0002] With the application of MEMS manufacturing technology in the field of atomic clocks, quantum technologies such as chip-level CPT atomic clocks and chip-level CPT magnetometers have emerged. Among them, the preparation technology of the atomic gas chamber based on MEMS technology is the most core key technology, and the preparation technology of the MEMS atomic gas chamber directly determines the performance of the atomic gas chamber. At present, the alkali metal filling methods in the preparation process of the MEMS atomic gas chamber are divided into the alkali metal direct filling method and the chemical reaction reduction method. The alkali metal direct filling method has a large difficulty...

Claims

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Application Information

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IPC IPC(8): B81C1/00B81C3/00G04F5/14
CPCB81C1/00015B81C3/00G04F5/14
Inventor 翟浩陈大勇廉吉庆冯浩
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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