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Piezoelectric element, manufacturing method of piezoelectric element, piezoelectric actuator, inkjet head, and inkjet printer

A piezoelectric actuator, piezoelectric element technology, applied in piezoelectric devices/electrostrictive devices, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc. Deterioration of electrical characteristics, etc.

Active Publication Date: 2019-02-15
KONICA MINOLTA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] For example, in Patent Document 1, in the structure in which the perovskite phase of the piezoelectric layer has (100) as its main orientation, the proportion of the pyrochlore phase is kept low, thereby suppressing the decrease in piezoelectric characteristics.

Method used

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  • Piezoelectric element, manufacturing method of piezoelectric element, piezoelectric actuator, inkjet head, and inkjet printer
  • Piezoelectric element, manufacturing method of piezoelectric element, piezoelectric actuator, inkjet head, and inkjet printer
  • Piezoelectric element, manufacturing method of piezoelectric element, piezoelectric actuator, inkjet head, and inkjet printer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1、2

[0086] The surface roughness of the lower electrode 24 is set to RMS 3-4nm, and the RF power of the cathode during PZT film formation is 34W / cm 2 , the film-forming temperature is not less than 550°C and not more than 600°C, and the ratio of the flow rate of oxygen to the flow rate of argon is not less than 2% and not more than 3%. In addition, the film formation rate of PZT is not less than 1.5 μm / hr and not more than 3 μm / hr.

Embodiment 3、4

[0088] The surface roughness of the lower electrode 24 is set to RMS 2 to 3 nm. The film-forming conditions of PZT are the same as in Examples 1 and 2.

[0089] The PZT (piezoelectric thin film 25 ) produced under the respective film formation conditions of Comparative Examples 1 to 4 and Examples 1 to 4 was evaluated by XRD. Figure 6 The spectrum obtained when XRD 2θ / θ measurement is performed on the piezoelectric thin film 25 produced in Example 4 is shown, for example. also, Figure 6 The intensity (diffraction intensity, reflection intensity) on the vertical axis of , is expressed in an arbitrary unit (Arbitary Unit) corresponding to the count rate per second (cps; count per second) of X-rays. From the peak intensities obtained from such spectra, the peak intensity ratio P of the (100) orientation of the perovskite phase was obtained. 1 , (110) orientation peak intensity ratio P 2 , (111) orientation peak intensity ratio P 3 , the peak intensity ratio of pyrochlore l...

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PUM

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Abstract

The piezoelectric element (27) has a piezoelectric layer (for example, a piezoelectric thin film (25)) on a base layer (for example, a lower electrode (24)). The piezoelectric layer has the same orientation characteristics as the base layer and different orientation properties from the base layer. In the thickness direction of the piezoelectric layer, the same orientation characteristic as that of the base layer is shifted to the base layer side.

Description

technical field [0001] The present invention relates to a piezoelectric element having a piezoelectric layer formed on a base layer, a method for manufacturing the piezoelectric element, a piezoelectric actuator including the piezoelectric element, an inkjet head, and an inkjet printer. Background technique [0002] In recent years, lead zirconate titanate (Pb(Zr,Ti)O 3 ) and other lead piezoelectric bodies, or lead-free non-lead piezoelectric bodies are used as electromechanical conversion elements for driving elements or sensors. Since such a piezoelectric body is formed as a thin film on a substrate such as silicon (Si), application to MEMS (Micro Electro Mechanical Systems, microelectromechanical systems) elements is expected. [0003] In the manufacture of MEMS elements, since high-precision processing using semiconductor process technologies such as photolithography can be adopted, the miniaturization and high density of elements can be realized. In particular, by co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/319B41J2/14H01L41/047H01L41/09H01L41/187
CPCB41J2/14233B41J2/161B41J2/1623B41J2/1628B41J2/1629B41J2/1646H10N30/2047H10N30/8554H10N30/076H10N30/079H10N30/708
Inventor 江口秀幸
Owner KONICA MINOLTA INC