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Superconductive nanowire single-photon detector with self-gain structure

A single-photon detector and superconducting nanowire technology, which is applied in the direction of photometry, photometry, and optical radiation measurement using electrical radiation detectors, and can solve problems such as reducing the detection efficiency of superconducting nanowire single-photon detectors. , to achieve self-gain, reduce time-domain jitter, and prevent thermal lock-in effect

Active Publication Date: 2017-01-04
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the critical current density of superconducting nanowires is a fixed value, increasing the bias current will inevitably increase the width of nanowires; increasing the width of nanowires will reduce the detection efficiency of superconducting nanowire single-photon detectors, Therefore, there is a conflict between the time-domain jitter and detection efficiency of superconducting nanowire single-photon detectors

Method used

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  • Superconductive nanowire single-photon detector with self-gain structure
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  • Superconductive nanowire single-photon detector with self-gain structure

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Embodiment 1

[0032] The circuit diagram of a superconducting nanowire single photon detector (SNSPD) with a self-gain structure is shown in figure 1 As shown, the shape of the nanowire is as figure 2 shown.

[0033] In the embodiment of the present invention, a traditional SNSPD nanowire (that is, the first nanowire 1, used as a photosensitive area) and a nanowire that is thicker than the traditional SNSPD nanowire (that is, the second nanowire 2, As a self-gain region) in parallel, and at the same time connect a thicker nanowire in series (that is, the third nanowire 3, the width of the third nanowire 3 is the sum of the first nanowire 1 and the second nanowire 2, realizing the SNSPD signal self-gain, and reduce the time-domain jitter of SNSPD. By designing the series nanowire (that is, the length of the third nanowire 3 is equivalent to the series inductance L s The length of the inductance value) controls the total inductance of the branch to prevent thermal lock-up effect.

[0034]...

Embodiment 2

[0045] Part of the processing flow of the superconducting nanowire single photon detector with current self-gain structure is as follows:

[0046] 1. Clean the substrate;

[0047] 2. Magnetron sputtering 4-6mm NbN (niobium nitride) thin film;

[0048] 3. Cut the two-inch substrate into small pieces of 1cm×1cm;

[0049] 4. Photolithographic electrodes and alignment marks

[0050] 1) Clean the film (acetone + alcohol + deionized water);

[0051] 2) Spin glue (NR9-3000PY (photoresist), pre-spin 588rpm, 10s, formal spin 2940rpm, 50s);

[0052] 3) Pre-baking (120°C, 5min);

[0053] 4) Exposure (after testing the dose matrix (exposure dose test method));

[0054] 5) Medium drying (95°C, 3min);

[0055] 6) Developing (RD6 (developer solution)), fixing (deionized water).

[0056] 5. Electron beam exposure nanowire + nanowire etching

[0057] 1) Spin gel (HSQ (electron beam exposure glue), pre-spin 588rpm, 10s, formal spin 3528rpm, 100s);

[0058] 2) Pre-baking (90°C, 1min); ...

Embodiment 3

[0065] The embodiment of the present invention uses the electrothermal model to simulate the pulse waveform of the superconducting nanowire single photon detector with the current self-gain structure, and compares and analyzes the superconducting nanowire single photon detector with the current self-gain structure of different widths. The model simulation results are as follows:

[0066] Depend on Figure 3 to Figure 6 It can be seen that with the increase of the width of the self-gain region, although the rise time and recovery time of the pulse are getting longer and longer, the slope at half of the rising edge not only does not decrease, but continues to increase. For the same noise amplitude, the larger the slope corresponding to half of the rising edge, the smaller the time domain jitter. Therefore, the SNSPD with self-gain structure can reduce the time domain jitter, which verifies the feasibility of this method.

[0067] Depend on Figure 7 It can be seen that the ou...

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Abstract

The invention discloses a superconductive nanowire single-photon detector with a self-gain structure. The single-photon detector comprises a first nanowire used as a photosensitive area and a second nanowire used as a self-gain area. The first nanowire is connected with the second nanowire in parallel. The width ratio of the second nanowire to the first nanowire is N, wherein N is larger than 1. The first nanowire is used for detecting photons. The second nanowire is used for storing current, thereby achieving amplifying of pulse signals. A parallel branch of the first nanowire and the second nanowire is connected with a third nanowire in series. The width of the third nanowire is the sum of the width of the first nanowire and the width of the second nanowire. The length of the second nanowire is used for controlling inductance proportion of the first nanowire and the second nanowire. By adjusting the length of the second nanowire, the length proportion of the first nanowrie and the second nanowire is controlled, thereby controlling the inductance proportion, so the first nanowire and the second nanowire are allowed to be in a high-bias current state. The third nanowire is used for increasing total inductance of the branch. By controlling the length of the third nanowire, the total inductance of the branch is controlled, thereby avoiding a thermal latch-up effect.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a superconducting nanowire single photon detector with a self-gain structure. Background technique [0002] Since its appearance in 2001, superconducting nanowire single photon detectors (SNSPDs) have become a hot research direction in the field of superconducting electronics. As a new type of single-photon detection technology, SNSPD has the advantages of high detection efficiency, low dark count, small time domain jitter, high count rate, wide response spectrum, and simple circuit. [0003] Time domain jitter is an important performance index of SNSPD, which determines the time resolution capability of SNSPD. For example, in time-resolved fluorescence spectrum measurement, the time-domain jitter of SNSPD determines the shortest fluorescence lifetime that can be measured; The number of encoded bits; in laser ranging and optical time domain reflectometry systems, time doma...

Claims

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Application Information

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IPC IPC(8): G01J1/44
CPCG01J1/44G01J2001/442
Inventor 胡小龙刘海毅程宇豪
Owner TIANJIN UNIV
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