Method for fast low-temperature growing of various graphical three-dimensional graphenes

Abstract

The invention provides a method for fast low-temperature growing of various graphical three-dimensional graphenes and belongs to the fields of electronic production technology and flexible device preparation. The method includes the steps of (1), making mask plate graphs; (2), fixing mask plates and growing substrates; (3) growing three-dimensional graphenes at a low temperature. The method for fast low-temperature growing of various graphical three-dimensional graphenes can be used for preparing the optional shapes of three-dimensional graphenes, is simple in step, efficient, low in cost and environment friendly, needs no heating treatment, is applicable to industrial production of the graphical three-dimensional graphenes and can be applied to graphical treatment of other two-dimensional and three-dimensional materials.

Description

Technical field [0001] The invention relates to a method for producing three-dimensional graphene, in particular to a method for rapidly growing various types of patterned three-dimensional graphene at low temperature, and belongs to the fields of electronic production technology and flexible device preparation. Background technique [0002] As a two-dimensional monoatomic layer atomic crystal, graphene has high electrical conductivity, large specific surface area, good mechanical and electrochemical properties. The carbon material of the nanowall structure has graphite flakes that grow perpendicular to the substrate, a highly open boundary structure and a wealth of edge sites. This three-dimensional structure of the graphene nanowall makes the graphene have a higher specific surface area and high mechanical strength , Faster electron transmission rate, etc., has a wide range of application prospects in the field of electrochemistry and sensors. [0003] Graphene and three-dimensi...

AI Technical Summary

Problems solved by technology

[0003] Microelectronic devices based on graphene and three-dimensional graphene require precise positioning and patterning. At present, the main technologies for patterning graphene are: (1) first patterning catalysts, growing patterned graphene and three-dimensional graphite (2) Transfer graphene and three-dimensional graphene to the device substrate first, and then use photolithography and etching to finally etch the desired pattern. This method requires oxygen plasma, which will Graphene and three-dimensional graphene cause damage, and the damage of organic solvent to three-dimensional graphene in the transfer process is also relatively large, and finally the recycling of waste liquid is difficult, and it is difficult to prepare excellent products; (3) using the template imprinting method, this This method needs to make different templates, the manufacturing process is complex, and the cost is high; (4) the growth substrate is patterned using techniques such as etching, which is a complex technical process and is not conducive to large-scale production

The three-dimensional graphene patterned by the above methods is difficult to peel off from the growth substrate. The steps of various methods are complicated and require heat treatment, which cannot be directly and quickly prepared, which is not conducive to industrial mass production.

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