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Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof

A technology of interdigitated electrodes and targets, which is applied to parts of thermometers, instruments, thermometers, etc., can solve problems such as prolonging working time and degradation of electrode materials, and achieve enhanced adhesion, increased temperature tolerance, and improved manufacturing process simple effect

Inactive Publication Date: 2017-01-18
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The interdigitated electrode material provided by the present invention solves the degradation problem of the electrode material of the surface acoustic wave device in the high temperature environment, enhances the high temperature tolerance of the device, and prolongs the working time of the device in the high temperature environment

Method used

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  • Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof
  • Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof
  • Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0048] Embodiment 1, on AlN / sapphire substrate, prepare Ir-Mo / Ta interdigitated electrode

[0049] (1) The AlN / sapphire substrate was ultrasonically cleaned with acetone, alcohol and deionized water for 5 minutes respectively, and then dried with nitrogen, and the cleaned substrate was placed in the electron beam evaporation chamber.

[0050] (2) Vacuum the electron beam evaporation chamber to a background vacuum of 10 -6Below Pa, the distance from the target to the substrate is 60m. Open the autobiography, adjust the electron gun power to be 17%; control the evaporation speed of the Ta electrode material to be Open the baffle, and coat the Ta electrode with a thickness of 10nm; after the coating is finished, let it stand for more than 10 minutes, fill it with nitrogen, and take out the substrate.

[0051] (3) Fix the substrate in step (2) on the substrate stage of magnetron sputtering with iron wire, and put the substrate together with the substrate stage into the vacuum c...

Embodiment 2

[0058] Embodiment 2, in La 3 Ga 5 SiO 14 On the substrate, prepare Ir-Mo / Ta high temperature interdigitated electrode

[0059] (1) La 3 Ga 5 SiO 14 The substrate was ultrasonically cleaned with acetone, alcohol and deionized water for 5 minutes respectively, and then dried with nitrogen, and the cleaned substrate was placed in the electron beam evaporation chamber.

[0060] (2) Vacuum the electron beam evaporation chamber to a background vacuum of 10 -6 Below Pa, the distance from the target to the substrate is 60cm, turn on the autobiography, adjust the power of the electron gun to 17%; control the evaporation speed of the Ta electrode material as Open the baffle; the thickness of the coated Ta electrode is 15nm. After the coating is finished, let it stand still for more than 10 minutes, fill it with nitrogen, and take out the substrate.

[0061] (3) Fix the substrate in step (2) on the substrate stage of magnetron sputtering with iron wire, and put the substrate tog...

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Abstract

The invention discloses an interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof. The interdigital electrode material comprises a substrate, a Ta buffer layer and an Ir-Mo alloy film wherein the Ta buffer layer and the Ir-Mo alloy film are sequentially deposited on the substrate. In the Ir-Mo alloy film, the atomic percentage of Mo is 5 to 10%. The interdigital electrode material prepared by the method has a conductivity rate of 9.2 X 106 S / m, and is suitable for use in a surface acoustic wave device. The surface acoustic wave device can be a high temperature surface acoustic wave device, whose center frequency is 1.42GHz. And after 72-hour annealing in a 1000-degree environment, the device can still function stably. The invented interdigital electrode material can be processed through a simple technology and an advanced scientific method. The material can also enable a high temperature surface acoustic wave sensor to be used at a higher temperature and effectively increase the temperature tolerance so that the surface acoustic wave temperature sensor can be applied to aerospace and some high-temperature environments in mechanical and metallurgical field. All in all, the surface acoustic wave sensor is made to withstand high temperature and have a longer service time.

Description

technical field [0001] The invention relates to an interdigital electrode material of a high-temperature surface acoustic wave sensor and a preparation method thereof, belonging to the manufacturing technology of surface acoustic wave devices. Background technique [0002] Surface acoustic wave devices are a new type of devices that use surface acoustic waves to complete various complex signal processing, and have been widely used in modern electronic information technology. The first surface acoustic wave device was successfully developed in 1965. In the following decades, surface acoustic wave devices developed vigorously and became indispensable electronic components in the field of information and communication. In addition to being widely used in communication systems, surface acoustic wave devices have also been widely used in physical and chemical sensors. This kind of device can be mass-produced, and the device is simple, small and stable, can be controlled wireless...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K11/26G01K1/00
CPCG01K11/265G01K1/00
Inventor 曾飞傅肃磊李起潘峰王光月
Owner TSINGHUA UNIV
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