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A kind of preparation method of silicon-based heterojunction solar cell and its tinx barrier layer

A heterojunction cell, silicon-based technology, used in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as difficult removal, and achieve the effects of increased adhesion, easy solution corrosion, and low resistivity

Active Publication Date: 2018-05-04
GOLD STONE (FUJIAN) ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the barrier layer materials in the current prior art have strong chemical corrosion resistance and are difficult to remove.

Method used

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  • A kind of preparation method of silicon-based heterojunction solar cell and its tinx barrier layer
  • A kind of preparation method of silicon-based heterojunction solar cell and its tinx barrier layer
  • A kind of preparation method of silicon-based heterojunction solar cell and its tinx barrier layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] refer to Figure 1-Figure 6 A silicon-based heterojunction solar cell and its TiN x The preparation method of the barrier layer is mainly by preparing TiN x barrier layer, and the TiN x The barrier layer is applied to the silicon-based heterojunction cell, which includes the following steps:

[0028] Step 1. Deposit an intrinsic amorphous silicon layer and a P-type amorphous silicon thin film layer 2 on the front side of the N-type silicon wafer 1 that has a light-trapping effect after being etched by an alkaline or acidic solution, and deposit an intrinsic amorphous silicon layer on the reverse side. A silicon layer and an N-type amorphous silicon thin film layer 3 .

[0029] Step 2: Deposit a transparent conductive oxide film 4 on the P-type amorphous silicon thin film layer 2 and the N-type amorphous silicon thin film layer 3 by PVD sputtering method, and the transparent conductive oxide thin film 4 is made of ITO.

[0030] Step 3: Depositing TiN on the transpare...

Embodiment 2

[0036] With reference to the preparation steps described in Example 1, the TiN prepared by depositing on the surface of single crystal silicon in this example x After the barrier layer 5, copper plating is carried out, so that the TiN x A layer of copper thin film is formed on the barrier layer 5, and then the silicon wafer is heat-treated at 400°C for 30 minutes. The test results show that no copper-silicon compound is produced, and the diffusion barrier performance is good.

Embodiment 3

[0038] Referring to the preparation steps described in Example 1, the prepared TiN is deposited on the surface of single crystal silicon in this embodiment x Barrier layer 5, the thickness is controllable only between 2-50nm, good uniformity, can ensure the excellent quality of subsequent deposited copper layer, at the same time deposited at low temperature, the film has an amorphous structure, treated in alkaline corrosion solution, 30-120S The inner film is completely etched away, effectively reducing light loss.

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Abstract

The invention discloses a silicon-based heterojunction cell and a preparation method of TiNx barrier layers of the silicon-based heterojunction cell. The preparation method comprises the following steps: depositing an intrinsic amorphous silicon layer and a P-type amorphous silicon film layer on the front surface of an N-type silicon substrate, and depositing an intrinsic amorphous silicon layer and an N-type amorphous silicon film layer on the reverse surface of the N-type silicon substrate; depositing transparent conductive oxide films on the P-type amorphous silicon film layer and the N-type amorphous silicon film layer; and depositing the TiNx barrier layers on the transparent conductive oxide films by using low-temperature magnetron sputtering. Adhesive force of Cu and the transparent conductive oxide films is increased, followed-up packaging of heterojunction solar cells is facilitated, diffusion of copper can further be stopped effectively, the TiNx barrier layers in a non-electrode grid line region are easily corroded by a solution, the TiNx barrier layers are low in resistivity, and the thickness of the TiNx barrier layers is easy to control.

Description

technical field [0001] The invention relates to the technical field of manufacturing solar cells, in particular to the manufacturing technology of heterojunction cells. Background technique [0002] In solar cell technology, compared with traditional P-type monocrystalline / polycrystalline solar cells, silicon-based heterojunction solar cells are the most attractive due to their high conversion efficiency, simple process flow and low temperature coefficient , especially forming copper metal grid lines on the surface of the conductive oxide of the heterojunction solar cell by means of a copper interconnection plating method. Since Cu diffuses rapidly in Si at a very low temperature, it affects the minority carrier lifetime and leakage current of the device, resulting in a decrease in device performance and reliability. Even when the content of Cu is very low, the electrical performance of the device will be degraded. Therefore, the selection of barrier layer material and bar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/072H01L31/028H01L31/20
CPCH01L31/0264H01L31/072H01L31/20Y02E10/547Y02P70/50
Inventor 黄辉明宋广华罗骞
Owner GOLD STONE (FUJIAN) ENERGY CO LTD
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