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Method for preparing and recycling sulfone polymer quartz crystal chip

A quartz crystal and polymer technology is applied in the field of preparation and recycling of sulfone polymer quartz crystal chips to achieve the effects of reducing costs, realizing recycling and promoting interaction

Active Publication Date: 2017-02-01
XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the existing application requirements when using QCM-D technology to analyze the fouling mechanism of sulfone polymer membranes, the present invention is based on the high-speed centrifugation mechanism, combined with the physical and chemical properties of the sulfone polymer material and the thermodynamic process of the polymer solution, Developed a method for the preparation and recycling of a sulfone polymer quartz crystal chip

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0034] A method for preparing a sulfone polymer quartz crystal chip of the present invention comprises the following steps:

[0035] 1) Pre-treatment of quartz crystal substrate: Firstly, irradiate the quartz crystal substrate with the surface of silicon dioxide under a UV lamp with a power of 12W and a wavelength of 254nm for 10-15min, and then impregnate it in a concentration of 5-10% , Sodium lauryl sulfate solution at a temperature of 20-30°C for 20-30min, then ultrasonically in ultrapure water for 2-5min, after the ultrasonication is completed, fully rinse the quartz crystal substrate with ultrapure water, and finally dry it with nitrogen ,stand-by;

[0036] 2) Polymer solution preparation: mix sulfone polymer (polysulfone or polyethersulfone) with organic solvent (dimethylacetamide, dimethylformamide, dimethyl sulfoxide or N-methylpyrrolidone) according to the mass The percentage is 10-15%: the proportion of 85-90% is stirred and dissolved at 40-70°C for 4-10 hours, and...

Embodiment 1

[0045] 1) Preparation of polysulfone quartz crystal chip:

[0046] First, the silica quartz crystal substrate was irradiated for 15 minutes under a 12W ultraviolet lamp with a wavelength of 254nm, and then it was immersed in a sodium dodecyl sulfate solution with a mass concentration of 8% at 25°C for 25 minutes, and then placed in an ultra- Sonicate in pure water for 5 minutes, fully rinse the quartz crystal substrate with ultrapure water, and finally dry it with nitrogen gas for use.

[0047] Secondly, the polysulfone with a mass percentage of 12% and the N-methylpyrrolidone with a mass percentage of 88% were stirred and dissolved at 60° C. for 8 hours, and then stood at room temperature for 2 hours to obtain a homogeneous polysulfone solution for use.

[0048] Install the above-mentioned quartz crystal substrate on a centrifugal rotating equipment platform equipped with a heating plate. First, in a low-temperature environment of 5°C, drop 8 μL of polysulfone solution onto t...

Embodiment 2

[0053] 1) Preparation of polyethersulfone quartz crystal chip:

[0054] First, the silica quartz crystal substrate was irradiated for 10 minutes under a 12W ultraviolet lamp with a wavelength of 254nm, and then it was immersed in a sodium dodecyl sulfate solution with a mass concentration of 10% at 20°C for 30 minutes, and then placed in an ultra-violet lamp. Sonicate in pure water for 2 minutes, and finally rinse thoroughly with ultrapure water and blow dry with nitrogen, and set aside.

[0055] Next, the polyethersulfone with a mass percentage of 15% and the dimethylformamide with a mass percentage of 85% were stirred and dissolved at 70° C. for 4 hours, and then stood at room temperature for 4 hours to obtain a homogeneous polyethersulfone solution for use.

[0056] Install the above-mentioned quartz crystal substrate on a centrifugal rotating equipment platform equipped with a heating plate. First, in a low-temperature environment of 10°C, drop 7 μL of polyethersulfone sol...

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Abstract

The invention discloses a method for preparing and recycling a sulfone polymer quartz crystal chip. The method includes the steps that 1, ultraviolet lamp irradiation and a lauryl sodium sulfate solution are combined to pretreat a quartz crystal substrate; 2, sulfone polymer and organic solvent are dissolved by a certain ratio to prepare a homogeneous sulfone polymer solution; 3, the sulfone polymer is uniformly coated on the surface of the quartz crystal substrate through fractional centrifugation rotating and thermally treated in a vacuum environment to obtain the sulfone polymer quartz crystal chip; 4, after the sulfone polymer quartz crystal chip is used, a sulfone polymer functional layer is removed from the obtained sulfone polymer quartz crystal chip through a physical and chemical combined multi-stage cleaning procedure to achieve recycling use of the quartz crystal substrate. The method is easy to operate and high in practicability, achieves preparation of a nanoscale sulfone polymer functional layer and expands application of the QCM-D technology to the field of separating membranes.

Description

technical field [0001] The invention belongs to the field of development of dissipative quartz crystal chips, and mainly relates to a method for preparing and recycling a sulfone polymer quartz crystal chip. Background technique [0002] Dissipative quartz crystal microbalance (QCM-D) is a new type of sensitive mass detection instrument, which can effectively detect the adsorption and sedimentation behavior of solute in solution on the surface of quartz crystal chip, and provide the corresponding adsorption layer structure characteristics, viscoelastic coefficient, etc. It has the advantages of simple structure, low cost, high sensitivity and measurement accuracy, and can realize online monitoring. It is widely used in the fields of chemistry, physics, biology, medicine and surface science. [0003] In recent years, the use of QCM-D technology to analyze the adsorption behavior of pollutants at the membrane interface and the structural characteristics of the adsorption layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N5/02C03C17/32
CPCG01N5/02C03C17/32
Inventor 苗瑞王磊王佳璇邓东旭吕永涛刘婷婷朱苗王旭东
Owner XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY