Preparation method of MgO-doped ZnO sputtering target material

Abstract

A preparation method of a MgO-doped ZnO sputtering target material comprises the following steps: weighing ZnO powder and MgO powder in proportion and putting the powders into a nylon ball-milling tank, adding anhydrous ethanol and agate ball, rapidly ball-milling by a planetary ball mill and obtaining mixed powder, and screening agate ball; drying anhydrous ethanol; filling a mould and heating and pressing in a high temperature furnace; and discharging and processing and slicing a target billet to obtain the target material. According to the invention, high-purity ZnO powder and MgO powder are mixed and hot-pressed to prepare the target material. The technology is simple, and cost is reduced. A luminescent material prepared by the use of the target material has uniform particles, good dispersity and excellent luminescent properties. In addition, concentration of Mg-doped ZnO is adjustable, so as to change bandwidth and wave length of green ray. The target material can be used in fields of light emitting diodes and lasers, etc. Practicality is greatly enhanced.

Description

technical field [0001] The invention relates to the general coating technology of IPC classification C23C vacuum evaporation method, sputtering method, ion implantation method or chemical vapor deposition method, belongs to the field of new materials, especially the preparation method of MgO-doped ZnO sputtering target material. Background technique [0002] ZnO is a widely studied direct bandgap semiconductor with a bandgap width of 3.37eV at room temperature. The growth of GaN requires high temperature conditions, difficult film growth, high cost and lack of matching substrate crystallization quality, which is difficult to improve ZnO compared with GaN. Wide selection range of substrate materials Low growth temperature and rich sources of ZnO Low price, non-toxic to the environment, good radiation resistance, excellent photoelectric properties, excellent materials for preparing optoelectronic devices, and widely used in the fields of transparent conduction and thin film tra...

AI Technical Summary

Problems solved by technology

The preparation process of these methods is complicated and difficult to control, the conditions are relatively high, and the required equipment is expensive.

[0005] At present, the preparation of Zn for Mg-doped ZnO 1-x Mg x There are many studies on O thin films, but there are few reports on the preparation of Mg-doped ZnO powders by solid state reaction.