Semiconductor structures and methods of forming them
A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve problems such as poor performance
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[0031] As mentioned in the background, conventional FinFETs, especially P-type FinFETs, have poor performance.
[0032] After research, it is found that in the fin field effect transistor, the crystal plane on the top surface of the fin is usually (100), the crystal plane on the side wall surface of the fin is usually (110), and the atomic density of the (110) crystal plane is greater than ( 100) the atomic density of the crystal plane, so that in the process of easily forming the fin field effect transistor, based on the influence of the thermal process, more dangling bonds will be generated on the side wall surface of the fin. The dangling bonds on the sidewalls and top surfaces of the fins will form charge traps on the sidewalls and top surfaces of the fins, so that the intensity of the electric field received by the channel region of the fin field effect transistor changes, thereby causing a P-type fin field effect transistor. The effect transistor produces a negative bias...
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