Method for preparing angle-controllable gentle slope microstructure
A microstructure and gentle slope technology, applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of poor wet etching uniformity, insufficient slope, and poor device performance, so as to solve the problem of serious side etching. , The effect of good etching depth and simple preparation process
Inactive Publication Date: 2017-03-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
Although it is simple and convenient, there are also some disadvantages: the uniformity of wet etching is poor; the etching end point is difficult to control, and it is easy to cause over-etching, resulting in poor device performance; This method cannot be used for amorphous materials; the mesa will be corroded in addition to the vertical direction, and the horizontal direction will also be corroded. When the vertical and lateral etching are relatively small, the mesa is too small
Although the above-mentioned methods can produce a certain gentle slope, the angle of the gentle slope is not easy to control, and the formed slope is not good enough; in the actual process, different requirements, different devices require gentle slopes of different angles, and the current various processes Neither can be well realized; therefore the present invention provides a method for preparing an angle-controllable gentle slope microstructure, which can better supplement the gap in this process
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[0024] The present invention will be described in further detail below in conjunction with specific embodiments and accompanying drawings.
[0025] This embodiment provides a method for preparing an angle-controllable gentle slope microstructure, using amorphous silicon as the etching material (semiconductor material) of the lower layer, AZ6112 positive photoresist as the photoresist, and using sulfur hexafluoride-containing plasma Etching gas etches amorphous silicon and A Z6112 photoresist; its process flow chart is as follows figure 1 shown, including the following steps:
[0026] Step 1. Use a coating machine to grow a layer of amorphous silicon film on the substrate with a thickness of about 1 micron, such as figure 2 shown;
[0027] Step 2. Spin-coat a layer of AZ6112 positive photoresist on the amorphous silicon film with a coater, with a thickness of 1.4 microns, such as image 3 shown;
[0028] Step 3. Exposure: put the substrate on a hot plate at 100°C, and pre-...
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The invention belongs to the technical field of a semiconductor device manufacture process, and particularly provides a method for preparing an angle-controllable gentle slope microstructure. The method comprises the steps of growing a semiconductor material film on a substrate; performing spin-coating of one photoresist layer on the semiconductor material film; in an exposure period, performing exposure of the photoresist by means of a light diffraction principle in a manner of keeping a vertical distance between a mask and the photoresist; generating different exposure amount at a pattern edge position, thereby obtaining the photoresist with a gentle slope shape after developing; performing dry-method etching for transferring the gentle slope shape to the semiconductor material film; and eliminating the photoresist through washing, thereby obtaining the gentle slop microstructure. The method has advantages of simple process and high controllability. The method has advantages of settling a problem of high difficulty in controlling the gentle slope angle in current gentle slope etching, realizing good control to the angle of the gentle slope on a tabletop and etching depth, improving finished product rates of devices and circuits, and improving side surface controllability of glue.
Description
technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing technology, and relates to a method for controlling the gradient of photoresist by adjusting the distance between a substrate and a mask plate in the exposure stage so as to prepare a controllable gentle-slope microstructure by using a photoresist with a positive trapezoidal cross-section. Background technique [0002] The semiconductor mesa gentle slope technology is widely used in the semiconductor manufacturing process. This technology can avoid the problem that the evaporated metal is thinner on the side because the side of the step is relatively steep, which seriously affects the current handling capacity of the entire circuit; in addition, it can prevent the upper material from being stressed on the side of the pattern because the side of the step is relatively steep Too large to cause breakage problems. At present, the gentle slope technology of semiconductor mes...
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IPC IPC(8): H01L21/027H01L21/3213
CPCH01L21/0273H01L21/32139
Inventor 钟慧秦康宁张睿霍振选杨泰张根
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA