Topological insulator composite film with high spin polarized electron channel and preparation thereof
A technology of topological insulators and composite films, applied to conductive layers on insulating carriers, from chemically reactive gases, crystal growth, etc., can solve problems affecting device performance, reducing carrier Fermi velocity, heat loss, etc. The effect of improving stability and reliability, improving spin current transport capability, and improving dispersion linearity
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[0025] (1) Load high-purity Bi, Se, Sb, and S raw materials respectively in the aluminum oxide crucible of the beam source furnace of the molecular beam epitaxy system, and the purity of these raw materials is at least 99.999%; cut 6H-SiC (0001) Form a long substrate of about 5mm×10mm, and use deionized water and alcohol to carry out ultrasonic cleaning in sequence, and then dry it with nitrogen gas, fix it on the sample holder, and install it on the sample holder of the system together;
[0026] (2) Evacuate the system to ultra-high vacuum, and degas the 6H-SiC substrate and evaporation source. The degassing temperature of the 6H-SiC substrate is 600°C, and the degassing temperatures of the evaporation sources Bi, Se, Sb, and S are 600°C, 280°C, 550°C, and 200°C, respectively, to remove gas molecules adsorbed on their surfaces or oxidize to obtain a clean source of evaporation;
[0027] (3) Apply a direct current to the 6H-SiC substrate, use the heat generated by the resista...
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