Heat dissipation structure and processing technology for single-tube IGBT (Insulated Gate Bipolar Transistor)
A heat-dissipating structure, single-tube technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of the influence of the coolant ambient temperature on the structure design of the heat exchanger, the reduction of operational safety, and the high noise, and achieve excellent in-plane The effect of heat conduction performance, improving longitudinal conduction performance, and enhancing heat dissipation performance
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[0038] The present invention will be further described below in conjunction with drawings and embodiments.
[0039] The invention proposes a heat dissipation structure of a single-tube IGBT, which generally includes a substrate, a chip, a heat sink, a graphene heat dissipation layer and a graphene-based interconnection material. Wherein the single-layer graphene film prepared by chemical vapor deposition is used as the heat dissipation layer for the fronts of the IGBT chip 11 and the FRD chip 21, see figure 1 and figure 2 . figure 1 The upper surface of the middle IGBT chip 11 has an IGBT chip emitter 12 and a gate 13 , and the upper surface of the IGBT chip emitter 12 is a first graphene thin film heat dissipation layer 10 . figure 2 The FRD chip emitter 22 is arranged on the upper surface of the middle FRD chip 21 , and the second graphene film heat dissipation layer 20 is formed on the upper surface thereof.
[0040] The few-layer graphene powder prepared by the redox ...
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