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Cs2SnI6-CH3NH3PbI3 bulk heterojunction-based solar cell and preparation method thereof

A technology of solar cells and bulk heterojunctions, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems affecting the photoelectric conversion efficiency of cells, affecting current, etc., to facilitate the promotion of industrialization, improve crystallinity and grain size , High stability effect

Inactive Publication Date: 2017-05-10
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the structure of traditional perovskite solar cells, many defects are generated at the interface, which makes electron holes recombine at the interface, which affects the output of current and further affects the photoelectric conversion efficiency of the cell.

Method used

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  • Cs2SnI6-CH3NH3PbI3 bulk heterojunction-based solar cell and preparation method thereof
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  • Cs2SnI6-CH3NH3PbI3 bulk heterojunction-based solar cell and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0024] (1) Cs 2 SnI 6 Powder preparation: SnI 4 Dissolve the powder in warm ethanol solution, dissolve CsI powder in DMF solution, mix the above solutions and let stand to precipitate Cs 2 SnI 6 Crystals, filtered and dried;

[0025] (2) Cut FTO transparent conductive glass into 1.6×1.7cm substrates, then ultrasonically clean with lye for 30-60 min, then ultrasonically clean with alcohol for 30-60 min, and finally clean with distilled water for 10-30 min, then Put it in the drying box to dry for later use;

[0026] (3) PbI 2 、CH 3 NH 3 I powder was dissolved in dimethylformamide (DMF) at a molar ratio of 1:1, and stirred at 70°C for 5 hours to obtain a precursor solution;

[0027] (4) Add 2.5 mg Cs to the precursor solution in (3) above 2 SnI 6 powder, stirred at room temperature for 2h to obtain a mixed solution;

[0028] (5) Spin-coat the solution obtained in (4) above on the FTO transparent conductive glass in (2) at a speed of 4000r / min, and anneal at 100°C for ...

Embodiment 2

[0033] (1) Cs 2 SnI 6 Powder preparation: SnI 4 Dissolve the powder in warm ethanol solution, dissolve CsI powder in DMF solution, mix the above solutions and let stand to precipitate Cs 2 SnI 6 Crystals, filtered and dried;

[0034] (2) Cut FTO transparent conductive glass into 1.6×1.7cm substrates, then ultrasonically clean with lye for 30-60 min, then ultrasonically clean with alcohol for 30-60 min, and finally clean with distilled water for 10-30 min, then Put it in the drying box to dry for later use;

[0035] (3) PbI 2 、CH 3 NH 3 I powder was dissolved in dimethylformamide (DMF) at a molar ratio of 1:1, and stirred at 70°C for 5 hours to obtain a precursor solution;

[0036] (4) Add 6.6 mg of Cs to the precursor solution in (3) above 2 SnI 6 powder, stirred at room temperature for 2h to obtain a mixed solution;

[0037](5) Spin-coat the solution obtained in (4) above on the FTO transparent conductive glass in (2) at a speed of 4000r / min, and anneal at 100°C fo...

Embodiment 3

[0043] (1) Cs 2 SnI 6 Powder preparation: SnI 4 Dissolve the powder in warm ethanol solution, dissolve CsI powder in DMF solution, mix the above solutions and let stand to precipitate Cs 2 SnI 6 Crystals, filtered and dried;

[0044] (2) Cut FTO transparent conductive glass into 1.6×1.7cm substrates, then ultrasonically clean with lye for 30-60 min, then ultrasonically clean with alcohol for 30-60 min, and finally clean with distilled water for 10-30 min, then Put it in the drying box to dry for later use;

[0045] (3) PbI 2 、CH 3 NH 3 I powder was dissolved in dimethylformamide (DMF) at a molar ratio of 1:1, and stirred at 70°C for 5 hours to obtain a precursor solution;

[0046] (4) Add 15 mg of Cs to the precursor solution in (3) above 2 SnI 6 powder, stirred at room temperature for 2h to obtain a mixed solution;

[0047] (5) Spin-coat the solution obtained in (4) above on the FTO transparent conductive glass in (2) at a speed of 4000r / min, and anneal at 100°C fo...

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Abstract

The invention belongs to the technical field of perovskite solar cell preparation, and particularly relates to a Cs2SnI6-CH3NH3PbI3 bulk heterojunction-based solar cell and a preparation method thereof. Inorganic Cs2SnI6 has a perovskite variant structure, is prepared through a method of reacting an ethanol solution of SnI4 with a DMF solution of CsI, and is used as a hole transport material in the solar cell. The perovskite solar cell with a bulk heterojunction structure is obtained through dissolving Cs2SnI6 powder into a CH3NH3PbI3 precursor solution, obtaining a uniform black film through spin-coating and carrying out further assembly. The solar cell provided by the invention is simple in preparation technology, free of pollution and abundant and cheap in raw materials, and is especially suitable for preparation of large quantities of low-cost solar cells.

Description

technical field [0001] The invention belongs to the technical field of preparation of thin-film solar cells, in particular to a solar cell based on Cs2SnI6&CH3NH3PbI3 body heterojunction and a preparation method. Background technique [0002] The solar cell with perovskite material as the light-absorbing layer has become a new type of cell with the fastest efficiency improvement, and the efficiency has exceeded 20%. Cs in cubic phase 2 SnI 6 It is perovskite structure CsSnI 3 Oxidation state, with high carrier concentration and mobility, can exist stably in air, can be used as hole transport material, compared with organic hole transport materials (spiro-OMeTAD, P3HT), inorganic Cs 2 SnI 6 It has the advantages of high stability, simple preparation, no pollution and no toxicity. [0003] In the structure of traditional perovskite solar cells, many defects are generated at the interface, which makes the recombination of electron holes at the interface, which affects the ...

Claims

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Application Information

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IPC IPC(8): H01L31/0745H01L31/18
CPCH01L31/0745H01L31/18Y02E10/50Y02P70/50
Inventor 姜亚南曹丙强
Owner UNIV OF JINAN
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