Epitaxial wafer of light-emitting diode and growth method thereof

Abstract

The invention discloses an epitaxial wafer of a light-emitting diode and a growth method thereof, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a light-emitting layer and a P-type GaN layer which are laminated on the substrate in turn. Mg is doped in the buffer layer. According to the epitaxial wafer, Mg is doped in the buffer layer, Mg can induce the material of the buffer layer to three-dimensional growth from two-dimensional growth to form three-dimensional island crystal grains with no requirement for the growth mode of low temperature and low pressure of the buffer layer, and the growth temperature of the buffer layer can be increased so that edge dislocation, screw dislocation and other lattice defects can be reduced, the crystal quality of the epitaxial wafer can be enhanced and the internal quantum efficiency and the anti-static capacity of the LED can be enhanced. Besides, the non-doped GaN layer is arranged between the buffer layer and the N-type GaN layer, and the non-doped GaN layer has the effect of separation so as to avoid the influence of the doped Mg in the buffer layer on electron injection light-emitting layer composite luminescence of the N-type GaN layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode and a growth method thereof. Background technique [0002] The semiconductor light-emitting diode (English: Light Emitting Diode, referred to as: LED) represented by gallium nitride has excellent characteristics such as large band gap, high electron saturation drift speed, high temperature resistance, and high power capacity. Its ternary alloy InGaN The band gap is continuously adjustable from 0.7ev to 3.4ev, and the emission wavelength covers the entire region of visible light and ultraviolet light, which has broad prospects in the emerging optoelectronic industry. [0003] GaN-based LED epitaxial wafers are epitaxially grown on heterogeneous substrates (such as sapphire substrates), and the lattice mismatch between GaN and the substrate is large. In order to improve the lattice matching between GaN and the substrate, a buffer...

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Problems solved by technology

[0005] Although the buffer layer composed of three-dimensional island-shaped grains can improve the lattice matching between GaN and the substrate, growing the buffer layer at low temperature and low pressure can easily lead to lattice defects such as edge dislocations and screw dislocations. It is difficult to eliminate, and it will pass through the undoped GaN layer and the N-type GaN layer to reach the light-emitting layer, resulting in a decrease in internal quantum efficiency

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