Differential pressure driving and compulsive exchange combined method for preparing organic-inorganic composite semiconductor material
An organic semiconductor and inorganic composite technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, analytical materials, etc., can solve the problems of uneven distribution of organic components and unfavorable environmental protection, etc., and achieve good spatial connectivity, low cost, and improved The effect of optoelectronic properties
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Embodiment 1
[0044] A pressure difference driven forced exchange recombination method for preparing an organic-inorganic compound semiconductor material, comprising the following steps:
[0045] (1) Porous SnO 2 The semiconductor nano-solid is prepared according to the method disclosed in the patent document CN 1431169 A: 3.0 grams of SnO 2 Nanoparticles made of SnO 2 porous nanosolids. The specific steps are as follows: at room temperature, weigh 3.0 g of SnO 2 Put the nanoparticles in the ball mill jar, then measure 5 ml of dioxane into the ball mill jar, mill at 180 rpm for 1 hour, put the mixture into the autoclave, seal it, and heat at a rate of 2.5°C / min The autoclave was heated to 100° C., and a constant pressure of 60 MPa was applied after constant temperature for 30 minutes. Then it was heated to 200° C. at the same rate of temperature rise under constant pressure and kept at constant temperature for 3 hours. After the autoclave was cooled to room temperature naturally, the p...
Embodiment 2
[0056] A pressure difference driven forced exchange recombination method for preparing organic-inorganic compound semiconductor materials, the steps are the same as in Example 1, the difference is:
[0057] Porous SnO in step (2) 2 The heat treatment temperature of semiconductor nano-solids in high vacuum is 300°C, and the vacuum degree is 8×10 -6 Pa;
[0058] In step (3), high-purity argon is replaced by high-purity nitrogen, copper phthalocyanine is replaced by zinc phthalocyanine, the heating temperature of the organic semiconductor is 450° C., and the duration of the exchange recombination process is 8 hours.
Embodiment 3
[0060] A pressure difference driven forced exchange recombination method for preparing organic-inorganic compound semiconductor materials, the steps are the same as in Example 1, the difference is:
[0061] Porous SnO in step (2) 2 The heat treatment temperature of semiconductor nano-solids in high vacuum is 100°C, and the vacuum degree is 4×10 -6 Pa;
[0062] In step (3), the copper phthalocyanine is replaced with polyaniline, the heating temperature of the organic semiconductor is 150° C., and the duration of the exchange recombination process is 72 hours; the inert gas used is nitrogen.
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