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A single crystal silicon infrared thermal stack structure including a beam membrane structure and its manufacturing method

A production method and technology of single crystal silicon, applied in the direction of microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve the problems of difficult processing, high cost, large thermal pile size, etc., and achieve high sensitivity, small size, The effect of simple process

Active Publication Date: 2018-11-02
上海迷思科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a single crystal silicon infrared thermopile structure including a beam membrane structure and its manufacturing method, which is used to solve the problem of using single crystal silicon as a thermocouple material in the prior art. The thermal pile size is large, the processing is difficult, and the cost is high.

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  • A single crystal silicon infrared thermal stack structure including a beam membrane structure and its manufacturing method
  • A single crystal silicon infrared thermal stack structure including a beam membrane structure and its manufacturing method
  • A single crystal silicon infrared thermal stack structure including a beam membrane structure and its manufacturing method

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Embodiment 1

[0063] Such as Figure 1a ~ Figure 1f As shown, the present embodiment provides a method for manufacturing a single crystal silicon infrared thermal pile structure, and the method at least includes the following steps:

[0064] First execute step 1), such as Figure 1a As shown, a single crystal silicon wafer 1 is provided, and a surface of the single crystal silicon wafer 1 is etched to form a plurality of isolation grooves 2 .

[0065] As an example, the single crystal silicon wafer 1 is an N-type or P-type (111) single-sided (or double-sided) polished silicon wafer. In this embodiment, a P-type single crystal silicon wafer 1 is used, with a thickness of 450 μm and an off-axis of 0±0.1°.

[0066] As an example, a deep reactive ion etching (Deep-RIE) process is used to etch the isolation trench 2 on the front surface of the single crystal silicon wafer. The isolation groove 2 is used to isolate two adjacent single crystal silicon beams 9 formed in subsequent fabrication. T...

Embodiment 2

[0089] Such as Figure 2a ~ Figure 2h As shown, the present embodiment provides a method for manufacturing a single crystal silicon infrared thermal pile structure, and the method at least includes the following steps:

[0090] First execute step 1), such as Figure 2a As shown, a single crystal silicon wafer 1 is provided, and a surface of the single crystal silicon wafer 1 is etched to form a plurality of isolation grooves 2 .

[0091] As an example, the single crystal silicon wafer 1 is an N-type or P-type (111) single-sided (or double-sided) polished silicon wafer. In this embodiment, a P-type single crystal silicon wafer 1 is used, with a thickness of 450 μm and an off-axis of 0±0.1°.

[0092] As an example, a deep reactive ion etching (Deep-RIE) process is used to etch the isolation trench 2 on the front surface of the single crystal silicon wafer. The isolation groove 2 is used to isolate two adjacent single crystal silicon beams 9 formed in subsequent fabrication. Th...

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Abstract

The invention provides a monocrystalline silicon infrared thermal stack structure including a beam membrane structure and a manufacturing method thereof. The thermal stack structure mainly includes an infrared absorbing film, a plurality of single crystal silicon beams, and a single crystal silicon beam formed above The thermoelectric material layer, etc., the single crystal silicon beam and the thermoelectric material layer form a thermocouple pair. Among them, the infrared absorbing film is suspended in the center of the structure, and the thermocouple is surrounded by the infrared absorbing film. One end of the thermocouple is connected with the infrared absorbing film, the other end is connected with the support film, and is connected to the substrate through the support film. The thermal stack structure of the present invention adopts single crystal silicon as the thermocouple material, and single crystal silicon has the advantages of high Seebeck coefficient and low resistivity, and can realize higher sensitivity; in addition, the present invention utilizes single crystal silicon beams to support suspended infrared absorption The membrane not only satisfies the thermal insulation requirements of the thermal stack, but also has high structural strength; moreover, the thermal stack structure of the present invention is made by single-sided processing of a single silicon wafer, and is small in size and low in cost, suitable for Mass production.

Description

technical field [0001] The invention belongs to the technical field of silicon micromechanical sensors, in particular to a single crystal silicon infrared thermal stack structure including a beam membrane structure and a manufacturing method thereof. Background technique [0002] With the rapid development of MEMS technology, infrared detectors based on MEMS micromachining technology are widely used in non-contact temperature measurement, infrared early warning and other fields due to their small size and low price. Thermal pile infrared detectors have obvious advantages over other types of infrared detectors, for example, they can work at room temperature without refrigeration equipment; they have the characteristics of self-excitation to generate signals without applying additional bias voltage / current, avoiding self- The heating effect ensures low power consumption at the same time; the direct measurement of static infrared signals can be realized without adding a chopper...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/02G01J5/12H01L35/00H01L31/09H10N10/00
CPCH01L31/09G01J5/12B81B7/02B81C1/00015B81C1/0015H10N10/00G01J5/023
Inventor 倪藻李昕欣李伟
Owner 上海迷思科技有限公司