Gate associated transistor free of polysilicon emitter
A technology of coupled-gate transistors and emitters, which is applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as secondary breakdown, high temperature, and high current density, and achieve low dynamic power consumption and high tube temperature. Low, good consistency
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[0042] The invention relates to a connected-gate transistor without a polysilicon emitter and a manufacturing method thereof.
[0043] Figure 1 to Figure 5 It is a structural schematic diagram of an embodiment of a connected-gate transistor without a polysilicon emitter and a process flow diagram along the A-A section of the present invention. The shown structure includes an N-type low-resistivity layer 42 in the lower layer and an N-type high-resistivity layer in the upper layer. The upper surface of the silicon substrate sheet 4 of the rate layer 41 has an N-type emitter region 3 with a high doping concentration. Region 2, the side of the P-type base region 2 is connected to the P-type concentrated base region 6 with a higher doping concentration than the P-type base region 2, the P-type concentrated base region 6 is orthogonal to the bus bar 61 in the P-type concentrated base region, and the silicon lining There is a base metal layer 10 above the bottom sheet 4, and the u...
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