Method in test of fixed charge of oxide layer by taking indium gallium alloy as mercury-substituted substance

Abstract

The invention relates to a method in test of fixed charge of an oxide layer by taking indium gallium alloy as a mercury-substituted substance. The method comprises the following steps of 1, placing solid single crystal indium and gallium in a graphite crucible for heating and smelting according to a certain proportion; 2, appropriately stirring the indium and the gallium by using a quartz rod during the smelting process until alloy of the indium and the gallium is formed; 3, stopping heating, placing an indium gallium alloy substance in a sealed and opaque container for storage after the indium gallium alloy substance is cooled to a room temperature; 4, selecting an N-type doping substrate and a silicon material sheet with a crystal direction <100>, and growing a SiO2 layer on a Si surface; 5, upwards placing one surface grown with the SiO2 layer on a metal table disc, allowing one surface of a silicon substrate to be in contact with the metal table disc, and starting vacuum absorption; 6, acquiring indium gallium alloy from the sealed container by using a capillary pipet, and fabricating a metal electrode on a surface of the SiO2 layer; 7, placing a metal probe rod so that the probe is in favorable contact with the indium gallium alloy; and 8, performing scanning under a preset bias voltage to obtain a C-V test result.

Description

Technical field [0001] The invention relates to a method for using indium gallium alloy as a mercury substitute in the fixed charge test of an oxide layer, and belongs to the manufacturing technical fields of integrated circuits, discrete devices and the like. Background technique [0002] As the manufacturing industry brings comfort and convenience to people, environmental protection has always been a prerequisite for people to advocate green life. In the semiconductor manufacturing process, mercury is used as an electrode to test the fixed charge link near the SiO2-Si interface. Mercury easily pollutes water and soil. At the same time, it can evaporate at room temperature to form mercury vapor, which accumulates in the skin and respiratory tract, causing harm to human health. For this reason, we are looking for a substance that can replace mercury as a metal electrode to detect the fixed charge near the SiO2-Si interface. [0003] Before the present invention was made, such as ...

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Problems solved by technology

[0006] 1. The use of mercury will pollute the environment

[0007] 2. There is a risk of mercury coming into contact with the human body during use, which will cause harm to the operator

[0008] 3. Mercury beads sometimes leak on the operating table, polluting the equipment

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