Polishing method of ultrathin wafer

A wafer, ultra-thin technology, applied in the manufacturing of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of increased capital investment, small output of wax-based processes, and inability to meet market demands, and achieves the The effect of high mechanical strength

Inactive Publication Date: 2017-07-28
SUZHOU SICREAT NANOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Although the use of wax polishing can avoid the occurrence of debris, the investment in waxing machines and supporting equipment is very high, especially for older polishing equipment, it needs to invest a lot of money for renovation, which increases capital investment and is not conducive to The effective use of the equipment, while the output of the wax process is small, can not meet the growing market demand

Method used

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  • Polishing method of ultrathin wafer
  • Polishing method of ultrathin wafer
  • Polishing method of ultrathin wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) if image 3 As shown, for an ultra-thin wafer, its thickness is not enough to meet the thickness requirements of embedding the template 201 or exposing the thickness of the template 201 during grinding. Here, a layer of adhesive tape is first attached to the non-polished surface of the wafer 203 to form a film-attached wafer with an increased overall thickness. , the adhesive tape is composed of two parts, that is, an adhesive film 302 and a surface film 301 that provides mechanical force. The surface film 301 is combined with the wafer 203 through an adhesive film 302, where the adhesive film 302 can be a resinous (such as polyurethane) viscous substance, and the adhesive film 302 is heated, photon radiation, laser radiation, electron radiation, and sound wave radiation. or other radiation methods, its viscosity will decrease or disappear; here the surface film 301 can be polyacrylic, polyethylene plastic film, or metal film (aluminum, tin, copper) and so on. The ...

Embodiment 2

[0047] (1) if Figure 6 Shown, first at wafer 203 non-polishing surface coating colloid 401, this colloid 401 can be coated with spin coating method, also can be coated with film method, also can be coated with glue spraying method; Colloid 401 after coating It can be cured directly, or it can be cured by leveling the surface after baking; the curing method can be heating, photon radiation, laser radiation, electron radiation, sound wave radiation or other radiation methods; the thickness of the colloid 401 is 10nm~1500μm; the colloid The material of 401 can be polyacrylate organic matter, phenolic resin organic matter, epoxy resin organic matter, etc.

[0048] The colloid 401 can lose colloidal properties through heating, photon radiation, laser radiation, electron radiation, sonic radiation or other radiation methods, and can be removed by water washing, plasma oxidation, or immersion in organic degumming solution; the colloid 401 can also be cured A film is formed, which c...

Embodiment 3

[0053] (1) if Figure 9 Shown, first at wafer 203 non-polishing surface coating colloid 401, this colloid 401 can be coated with spin coating method, also can be coated with film method, also can be coated with glue spraying method; Colloid 401 after coating It can be cured directly, or it can be cured after leveling the surface after baking; the curing method can be heating, photon radiation, laser radiation, electron radiation, sound wave radiation or other radiation methods. The thickness of colloid 401 is 10nm~1500μm. The material of the colloid 401 can be polyacrylate organic matter, phenolic resin organic matter, epoxy resin organic matter, and the like.

[0054] The colloid 401 can lose colloidal properties through heating, photon radiation, laser radiation, electron radiation, sonic radiation or other radiation methods, and can be removed by water washing, plasma oxidation, or immersion in organic degumming solution; the colloid 401 can also be cured A film can be fo...

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Abstract

The invention discloses a polishing method suitable for an ultrathin wafer. According to the polishing method, an adhesive tape and / or colloid is utilized for applying a film on the ultrathin wafer; and then polishing is performed according to a template method. The adhesive tape comprises two layers, namely an adhesive film and a surface layer film for providing a mechanical force. The surface layer film is combined with the wafer through the adhesive film. The colloid is applied according to a rotating application method, or a film applying method or a colloid spraying method. The applied colloid is directly solidified or solidified after leveling through baking the surface. The polishing method is advantageous in that 1), the added film can be used as one part of the wafer for being embedded into a vacuum absorption pad template so that no easy slipping of the wafer out of the template is realized, and furthermore the thickness of the polished wafer can be controlled through adjusting thickness of the adjusting film; and 2), the newly added film has relatively high mechanical strength and can be used for supplying mechanical supporting for the wafer so that no easy breakage of the wafer is realized in the polishing process.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a polishing method for a large-sized ultra-thin wafer. Background technique [0002] Chemical Mechanical Polishing (CMP) technology is one of the key technologies for wafer surface processing. It is used on the surface of large-sized bare wafers such as ultra-thin silicon single wafers for solar cells, ultra-thin silicon single wafers for integrated circuits, and sapphire substrate wafers for LEDs. Widely used in polishing process. [0003] Polishing can improve the roughness of the wafer surface, reduce the TTV of the wafer, achieve ultra-high flatness on the wafer surface, and improve the utilization rate of light for some optical wafers. For example, in the manufacturing process of integrated circuits, thousands of structural units are often built on the silicon wafer substrate, and these structural units are further formed into functional circuit devices through multi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67H01L21/683
CPCH01L21/02013H01L21/67132H01L21/6836H01L2221/68327
Inventor 夏秋良
Owner SUZHOU SICREAT NANOTECH CO LTD
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