Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene/(040) crystal face bismuth vanadate heterojunction and preparation method and application thereof

A technology of bismuth vanadate and graphene, which is applied in the field of RGO/crystal plane BiVO4 heterojunction and its preparation, can solve the problems of no reports, no patents and literature reports, etc., to improve quantum efficiency and photocatalytic activity And the effect of stability and uniform size distribution

Active Publication Date: 2017-08-04
SHAANXI UNIV OF SCI & TECH
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, RGO / (040) crystal facet BiVO has been prepared by microwave hydrothermal method. 4 The work of the composite has not been reported yet, and there are no patents and literature reports on the preparation of RGO / (040) crystal facet BiVO by microwave hydrothermal method 4 Complex

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene/(040) crystal face bismuth vanadate heterojunction and preparation method and application thereof
  • Graphene/(040) crystal face bismuth vanadate heterojunction and preparation method and application thereof
  • Graphene/(040) crystal face bismuth vanadate heterojunction and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1mol / L HNO at a uniform and slow speed under stirring 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 60min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.2mol / L;

[0031] Step 2, Precursor solution A was hydrothermally reacted at 80°C for 15 hours to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 70°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0032] Step 3, the graphene oxide (GO) prepared by the improved Hummers method was dissolved in an aqueous ethanol solution with a volume fraction of 50%, ultrasonically dispersed at 50°C with a power of 100W for 60min, stirred for 10min, and then 1 drop / sec Add 2mol / L HNO at the speed 3 , ultrasonication at 50°C with a power of 100W for 60min, stirring for 10min, then adding 2mol / L NaOH solution at a rate of 1 drop / second, ul...

Embodiment 2

[0035] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1.8mol / L HNO at a uniform and slow speed under stirring conditions 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 90min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.18mol / L;

[0036] Step 2, Precursor solution A was hydrothermally reacted at 78°C for 13.5h to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 72°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0037] Step 3, dissolve the prepared graphene oxide (GO) in 40% ethanol aqueous solution by volume fraction, ultrasonically disperse for 72min with a power of 80W at 40°C, stir for 15min, and then add 3mol / LHNO 3 , sonicated at 40°C with a power of 80W for 72min, stirred for 15min, then added 3mol / L NaOH solution at a rate of 2 drops / second, ultrasonicated at 40°C with a power of 80W for 72min, stirred for 15min, a...

Embodiment 3

[0040] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1.2mol / L HNO at a uniform and slow speed under stirring 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 75min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.22mol / L;

[0041] Step 2, Precursor solution A was hydrothermally reacted at 82°C for 14.5h to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 68°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0042] Step 3: Dissolve the prepared graphene oxide (GO) in an aqueous ethanol solution with a volume fraction of 50%, ultrasonically disperse it at 45°C with a power of 90W for 75min, stir for 20min, and then add 4mol / LHNO 3 , sonicated at 45°C with a power of 90W for 75min, stirred for 20min, then added 4mol / L NaOH solution at a rate of 3 drops / second, ultrasonicated at 45°C with a power of 90W for 75min, and stirred for 20...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a graphene / (040) crystal face bismuth vanadate heterojunction, a preparation method and application thereof. The preparation method comprises the following steps: firstly synthesizing (040) crystal face BiVO4 powder by a hydrothermal method; and then compounding the (040) crystal face BiVO4 powder and graphene oxide (GO) by a hydrothermal method, wherein the GO is reduced to graphene (RGO) in the process to obtain the RGO / / (040) crystal face BiVO4 heterojunction in the end. After compounding, the RGO and the (040) crystal face BiVO4 coexist and grow together. The preparation method has the beneficial effects that the RGO with excellent conductivity is compounded with the (040) crystal face BiVO4, the stimulated electrons of the BiVO4 are directionally transferred to the surface of the RGO to generate light reaction, so that the recombination of electron-hole pairs is effectively reduced, the quantum efficiency is improved, and the photocatalytic activity and stability of the heterojunction are improved.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to an RGO / (040) crystal plane BiVO 4 Heterojunctions and their preparation methods and applications. Background technique [0002] BiVO 4 It is a widely used semiconductor material and has a wide range of applications in the fields of ferroelastic materials, ion-conducting materials and pigments. BiVO 4 It has three crystal phase structures, namely monoclinic scheelite phase, tetragonal scheelite phase and tetragonal zirconite phase. The physical and chemical properties of bismuth vanadate are closely related to its crystal phase structure. For example, as a typical semiconductor material, bismuth vanadate has a band gap structure closely related to its crystal phase. The band gap of monoclinic bismuth vanadate is 2.4eV, while that of tetragonal bismuth vanadate is 2.9eV. The study found that at BiVO 4 Among the three crystal phases, the BiVO of the monoclinic scheelite phase ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/22B01J35/10C02F1/30C02F101/30C02F101/34C02F101/36C02F101/38
CPCC02F1/30B01J23/002B01J23/22C02F2101/34C02F2101/36C02F2101/38C02F2101/30C02F2305/10B01J35/60B01J35/39
Inventor 谈国强王颖赵程程任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com