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Selenium gallium zinc barium compound, selenium gallium zinc barium infrared nonlinear optical crystal, and preparation methods and purposes thereof

A compound, zinc-barium technology, applied in the field of inorganic compound materials, achieves the effects of fast growth, low cost, easy processing and preservation

Inactive Publication Date: 2017-08-08
INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the Ba / Zn / Ga / Se quaternary system, there is no research report so far, and this invention is the first report of chalcogenides in infrared nonlinear optical materials in this system

Method used

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  • Selenium gallium zinc barium compound, selenium gallium zinc barium infrared nonlinear optical crystal, and preparation methods and purposes thereof
  • Selenium gallium zinc barium compound, selenium gallium zinc barium infrared nonlinear optical crystal, and preparation methods and purposes thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Using 5BaSe+ZnGa 2 Se 4 +2Ga 2 Se 3 = Ba 5 ZnGa 6 Se 15 The reaction formula uses a high-temperature solid-state reaction method to prepare selenium-gallium-zinc-barium compounds;

[0037] The BaSe is 10.815 g, the ZnGa 2 Se 4 5.207 g, the Ga 2 Se 3 It is 7.527 grams; namely BaSe:ZnGa 2 Se 4 : Ga 2 Se 3 =0.05mol:0.01mol:0.02mol;

[0038] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into a mortar, mix and grind them, then put them into a Φ19mm×25mm quartz tube, and evacuate them to 10 -3 After Pa, the quartz tube was melted and packaged with an oxyhydrogen flame, put into a muffle furnace, raised to 800°C at a rate of 50°C / h, and kept at a temperature of 96h. After cooling, the sample was taken out, and the sample was ground and mixed before placing it again Vacuum the quartz tube to 10 -3 Pa was melted and sealed, and then put into a muffle furnace and heated to 800°C for sintering for 48 h...

Embodiment 2

[0040] Using 5BaSe+ZnGa 2 Se 4 +4Ga+6Se=Ba 5 ZnGa 6 Se 15 The reaction formula uses a high-temperature solid-state reaction method to prepare selenium-gallium-zinc-barium compounds;

[0041] The BaSe is 10.815 g, the ZnGa 2 Se 4 Be 5.207 grams, described Ga is 2.789 grams, and described Se is 4.738 grams; Namely BaSe:ZnGa 2 Se 4 :Ga:Se=0.05mol:0.01mol:0.04mol:0.06mol;

[0042] The specific operation steps are to weigh the reagents in the glove box according to the above dosage, mix them, and then put them into a quartz tube of Φ19mm×25mm, and vacuumize to 10 -3 After Pa, the quartz tube was melted and packaged with a hydrogen-oxygen flame, put into a muffle furnace, raised to 900°C at a rate of 30°C / h, and kept at a temperature of 96h. After cooling, the sample was taken out, and the sample was ground and mixed before being placed again. Vacuum the quartz tube to 10 -3 Pa was melted and sealed, and then put into a muffle furnace and heated to 800°C for sintering for ...

Embodiment 3

[0044] Using 5Ba+ZnGa 2 Se 4 +2Ga 2 Se 3 +5Se=Ba 5 ZnGa 6 Se 15 The reaction formula uses a high-temperature solid-state reaction method to prepare selenium-gallium-zinc-barium compounds;

[0045] The Ba is 6.866 g, the ZnGa 2 Se 4 5.207 g, the Ga 2 Se 3 7.527 grams, the Se is 3.948 grams; namely BaSe:ZnGa 2 Se 4 : Ga 2 Se 3 : Se=0.05mol:0.01mol:0.02mol:0.05mol;

[0046] The specific operation steps are to weigh the reagents in the glove box according to the above doses, put them into a Φ19mm×25mm quartz tube, and evacuate to 10 -3 After Pa, the quartz tube was melted and packaged with a flame, put into a muffle furnace, and slowly raised to 850°C, the heating rate was 40°C / h, and kept for 96h. Vacuum the quartz tube to 10 -3 Pa was melted and sealed, and then put into a muffle furnace and heated to 800°C for sintering for 48 hours; the sample was taken out and ground to obtain powdered Ba 5 ZnGa 6 Se 15 compound.

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Abstract

The invention discloses a selenium gallium zinc barium compound, which has a chemical formula of Ba5ZnGa6Se15. The invention also discloses a preparation method of the selenium gallium zinc barium compound. In addition, the invention also discloses a selenium gallium zinc barium crystal, and a preparation method and application thereof. In the growth process of a selenium gallium zinc barium infrared nonlinear optical crystal, the crystal can easily grow up and is not covered; the advantages of high growth speed, low cost, easy acquisition of large-size crystal and the like are realized. The obtained selenium gallium zinc barium infrared nonlinear optical crystal has the advantages that the infrared light transmission wave bands are wide; the mechanical properties are good; the processing and the storage are easy, and the like. The selenium gallium zinc barium crystal can be used for manufacturing an infrared laser frequency conversion device.

Description

technical field [0001] The invention relates to the technical field of inorganic compound materials, in particular to a selenium-gallium-zinc-barium compound and a preparation method thereof, a selenium-gallium-zinc-barium infrared nonlinear optical crystal, a preparation method and an application thereof. Background technique [0002] The second-order nonlinear optical crystal is a kind of important photoelectric functional material that is closely integrated with laser technology. This type of crystal can adjust the frequency of commercial lasers through nonlinear effects such as frequency doubling, difference frequency, sum frequency and optical parametric oscillation. , produce a new wavelength laser source, and then greatly expand the application range of laser. For example, using a suitable frequency doubling crystal, the Nd:YAG (output wavelength is 1064nm) laser can be frequency doubled to produce a laser with a wavelength of 532nm; the 2.1μm laser can be frequency d...

Claims

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Application Information

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IPC IPC(8): C01B19/00C30B29/46C30B11/00G02F1/355
CPCC01B19/002C01P2002/77C30B11/00C30B29/46G02F1/3551
Inventor 尹文龙余盛全张羽谢婧窦云巍袁泽锐唐明静方攀陈莹康彬
Owner INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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